Taiwan semiconductor manufacturing company, ltd. (20240379761). SEMICONDUCTOR DEVICE STRUCTURE INTEGRATING AIR GAPS AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE INTEGRATING AIR GAPS AND METHODS OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chih-Ching Wang of Kinmen (TW)

Wen-Hsing Hsieh of Hsinchu (TW)

Kuan-Lun Cheng of Hsinchu (TW)

SEMICONDUCTOR DEVICE STRUCTURE INTEGRATING AIR GAPS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379761 titled 'SEMICONDUCTOR DEVICE STRUCTURE INTEGRATING AIR GAPS AND METHODS OF FORMING THE SAME

Simplified Explanation: The patent application describes a semiconductor device structure with unique features, including a substrate, gate stack, source/drain features, and a conductive feature.

• The semiconductor device structure includes a substrate with a front side and a back side, a gate stack on the front side, and source/drain features on opposing sides of the gate stack.
• Each source/drain feature has a first side and a second side, with the second side of the first source/drain feature and the back side of the substrate at different elevations.
• A conductive feature is in contact with the second side of the first source/drain feature, exposing a portion of the back side of the substrate to air.

Key Features and Innovation:

• Unique semiconductor device structure with source/drain features at different elevations.
• Conductive feature in contact with source/drain feature for enhanced functionality.

Potential Applications:

• Advanced semiconductor devices for electronics industry.
• High-performance computing applications.

Problems Solved:

• Improved performance and functionality of semiconductor devices.
• Enhanced heat dissipation and electrical conductivity.

Benefits:

• Increased efficiency and reliability of semiconductor devices.
• Enhanced overall performance of electronic systems.

Commercial Applications:

• Potential applications in consumer electronics, data centers, and telecommunications industry.

Prior Art:

• Prior research on semiconductor device structures and materials in the field of electronics.

Frequently Updated Research:

• Ongoing research on semiconductor device structures and materials for improved performance and functionality.

Questions about Semiconductor Device Structure: 1. What are the specific advantages of having source/drain features at different elevations in a semiconductor device structure? 2. How does the conductive feature enhance the functionality of the semiconductor device structure?

Original Abstract Submitted

a semiconductor device structure, along with methods of forming such, are described. in one embodiment, a semiconductor device structure is provided. the semiconductor device structure includes a substrate having a front side and a back side opposing the front side, a gate stack disposed on the front side of the substrate, a first source/drain feature and a second source/drain feature disposed in opposing sides of the gate stack, wherein each first source/drain feature and second source/drain feature comprises a first side and a second side, and the second side of the first source/drain feature and the back side of the substrate are at different elevations. the semiconductor device structure also includes a conductive feature in contact with the second side of the first source/drain feature, wherein a portion of the back side of the substrate is exposed to air.