Taiwan semiconductor manufacturing company, ltd. (20240379759). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Wei-Yip Loh of Hsinchu City (TW)

Li-Wei Chu of New Taipei City (TW)

Hong-Mao Lee of Hsinchu City (TW)

Hung-Chang Hsu of Kaohsiung City (TW)

Hung-Hsu Chen of Tainan City (TW)

Harry Chien of Chandler AZ (US)

Chih-Wei Chang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379759 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

The semiconductor device described in the abstract consists of two transistors, each with its own channel layer, gate structure, and source/drain epitaxy structures. Additionally, there are metal silicide layers over the source/drain epitaxy structures of each transistor, as well as an isolation structure that covers these structures.

• The first transistor includes a first channel layer, a first gate structure, and first source/drain epitaxy structures.
• The second transistor includes a second channel layer, a second gate structure, and second source/drain epitaxy structures.
• A first metal silicide layer is over one of the first source/drain epitaxy structures.
• A second metal silicide layer is over one of the second source/drain epitaxy structures.
• The isolation structure covers the source/drain epitaxy structures of both transistors, with the first metal silicide layer separating it from one of the first source/drain epitaxy structures.

Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in electronic devices.

Problems Solved: - Provides improved isolation and connectivity within semiconductor devices. - Enhances the overall functionality and reliability of electronic components.

Benefits: - Increased performance and efficiency of semiconductor devices. - Enhanced connectivity and isolation capabilities. - Improved reliability and functionality of electronic systems.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Electronic Performance This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also find applications in the automotive industry for advanced driver assistance systems and in the healthcare sector for medical devices.

Questions about the technology: 1. How does the integration of metal silicide layers improve the performance of the transistors in the semiconductor device? 2. What are the specific advantages of using an isolation structure in semiconductor devices, and how does it contribute to overall functionality and reliability?

Original Abstract Submitted

a semiconductor device includes a first transistor, a second transistor, a first metal silicide layer, a second metal silicide layer, and an isolation structure. the first transistor includes a first channel layer, a first gate structure, and first source/drain epitaxy structures. the second transistor includes a second channel layer, a second gate structure, and second source/drain epitaxy structures. the first metal silicide layer is over one of the first source/drain epitaxy structures. the second metal silicide layer is over one of the second source/drain epitaxy structures. the isolation structure covers the one of the first source/drain epitaxy structures and the one of the second source/drain epitaxy structures, wherein in a cross-sectional view, the one of the first source/drain epitaxy structures is separated from the isolation structure through the first metal silicide layer, while the one of the second source/drain epitaxy structures is in contact with the isolation structure.