Taiwan semiconductor manufacturing company, ltd. (20240379758). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Wei-Yip Loh of Hsinchu (TW)

Hong-Mao Lee of Hsinchu (TW)

Harry Chien of Hsinchu (TW)

Po-Chin Chang of Hsinchu (TW)

Sung-Li Wang of Hsinchu (TW)

Jhih-Rong Huang of Hsinchu (TW)

Tzer-Min Shen of Hsinchu (TW)

Chih-Wei Chang of Hsinchu (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379758 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

The abstract describes a semiconductor device structure with specific layers and materials for improved performance.

• The structure includes n-type and p-type source/drain epitaxial features on a substrate.
• There are first and second silicide layers with different metals on the source/drain epitaxial features.
• A third silicide layer is on the first silicide layer, and a fourth silicide layer is on the second silicide layer.
• The third silicide layer is thicker than the fourth silicide layer.
• The different metals in the silicide layers contribute to the overall functionality of the semiconductor device.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in electronic devices.

Problems Solved: - The structure addresses the need for improved conductivity and reliability in semiconductor devices. - It offers a solution for optimizing the functionality of source/drain epitaxial features.

Benefits: - Enhanced performance and conductivity in semiconductor devices. - Improved reliability and efficiency in integrated circuits.

Commercial Applications: - This technology has potential applications in the semiconductor industry for developing high-performance electronic devices. - It can be utilized in the production of advanced processors, memory chips, and other electronic components.

Questions about the technology: 1. How does the use of different metals in the silicide layers impact the overall performance of the semiconductor device? 2. What specific advantages does the structure with multiple silicide layers offer compared to traditional semiconductor devices?

Original Abstract Submitted

a semiconductor device structure and methods of forming the same are described. in some embodiments, the structure includes an n-type source/drain epitaxial feature disposed over a substrate, a p-type source/drain epitaxial feature disposed over the substrate, a first silicide layer disposed directly on the n-type source/drain epitaxial feature, and a second silicide layer disposed directly on the p-type source/drain epitaxial feature. the first and second silicide layers include a first metal, and the second silicide layer is substantially thicker than the first silicide layer. the structure further includes a third silicide layer disposed directly on the first silicide layer and a fourth silicide layer disposed directly on the second silicide layer. the third and fourth silicide layer include a second metal different from the first metal, and the third silicide layer is substantially thicker than the fourth silicide layer.