Taiwan semiconductor manufacturing company, ltd. (20240379755). SEMICONDUCTOR DEVICES WITH COUNTER-DOPED NANOSTRUCTURES simplified abstract

SEMICONDUCTOR DEVICES WITH COUNTER-DOPED NANOSTRUCTURES

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Hsiao-Chun Chang of Hsinchu City (TW)

Guan-Jie Shen of Hsinchu City (TW)

SEMICONDUCTOR DEVICES WITH COUNTER-DOPED NANOSTRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379755 titled 'SEMICONDUCTOR DEVICES WITH COUNTER-DOPED NANOSTRUCTURES

The present disclosure describes a semiconductor device with counter-doped nanostructures and a method for forming the semiconductor device. The method includes forming a fin structure on a substrate, the fin structure including one or more first-type nanostructures and one or more second-type nanostructures. The method further includes forming a polysilicon structure over the fin structure and forming a source/drain (S/D) region on a portion of the fin structure and adjacent the polysilicon structure, the S/D region including a first dopant. The method further includes doping the one or more second-type nanostructures with a second dopant via a space released by the polysilicon structure and the one or more first-type nanostructures, where the second dopant is opposite to the first dopant. The method further includes replacing portions of the one or more doped second-type nanostructures with additional second-type nanostructures.

• Formation of a semiconductor device with counter-doped nanostructures
• Inclusion of first-type and second-type nanostructures in the fin structure
• Doping of second-type nanostructures with a second dopant opposite to the first dopant
• Replacement of doped second-type nanostructures with additional second-type nanostructures
• Utilization of polysilicon structure to facilitate doping process

Potential Applications: - Advanced semiconductor technology - High-performance electronic devices - Nanoscale integrated circuits

Problems Solved: - Enhancing performance and efficiency of semiconductor devices - Improving doping processes in nanostructures

Benefits: - Increased speed and reliability of electronic devices - Enhanced functionality of semiconductor components

Commercial Applications: Title: Advanced Semiconductor Devices with Counter-Doped Nanostructures This technology can be applied in the development of high-speed processors, memory chips, and other advanced electronic devices. It has the potential to revolutionize the semiconductor industry by enabling the production of more efficient and powerful components.

Questions about Semiconductor Devices with Counter-Doped Nanostructures: 1. How does the counter-doping process improve the performance of semiconductor devices? Counter-doping helps optimize the electrical properties of nanostructures, leading to enhanced conductivity and overall device efficiency.

2. What are the key advantages of using counter-doped nanostructures in semiconductor devices? Counter-doped nanostructures offer improved control over dopant distribution, reduced leakage currents, and enhanced device reliability.

Original Abstract Submitted

the present disclosure describes a semiconductor device with counter-doped nanostructures and a method for forming the semiconductor device. the method includes forming a fin structure on a substrate, the fin structure including one or more first-type nanostructures and one or more second-type nanostructures. the method further includes forming a polysilicon structure over the fin structure and forming a source/drain (s/d) region on a portion of the fin structure and adjacent the polysilicon structure, the s/d region including a first dopant. the method further includes doping the one or more second-type nanostructures with a second dopant via a space released by the polysilicon structure and the one or more first-type nanostructures, where the second dopant is opposite to the first dopant. the method further includes replacing portions of the one or more doped second-type nanostructures with additional second-type nanostructures.