Taiwan semiconductor manufacturing company, ltd. (20240379753). SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shahaji B. More of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379753 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF
Simplified Explanation: This patent application describes a semiconductor device and methods of formation, which can include various device types such as static random access memory, ring oscillator, and input/output devices. The device types may consist of n-type and p-type metal oxide semiconductor nanostructure transistors with different channel widths and other properties.
- The semiconductor device includes different device types like static random access memory, ring oscillator, and input/output devices.
- It comprises n-type and p-type metal oxide semiconductor nanostructure transistors with varying channel widths.
- Other properties such as gate length or source/drain region width may also differ based on the device type.
Key Features and Innovation:
- Inclusion of various device types in the semiconductor device.
- Utilization of n-type and p-type metal oxide semiconductor nanostructure transistors with different channel widths.
- Variation in other properties like gate length and source/drain region width based on the device type.
Potential Applications: This technology can be applied in the development of advanced semiconductor devices for various electronic applications such as memory storage, signal processing, and data communication.
Problems Solved:
- Addressing the need for diverse device types in semiconductor devices.
- Enhancing the performance and functionality of semiconductor devices through the use of different transistor types with varying properties.
Benefits:
- Improved efficiency and versatility in semiconductor device design.
- Enhanced performance and functionality in electronic applications.
- Potential for increased speed and reliability in data processing.
Commercial Applications: Potential commercial applications of this technology include the production of high-performance memory devices, efficient signal processing systems, and reliable input/output interfaces for electronic devices. This innovation could have significant implications in the semiconductor industry, leading to the development of more advanced and versatile electronic components.
Questions about Semiconductor Device Technology: 1. What are the key advantages of using n-type and p-type metal oxide semiconductor nanostructure transistors in semiconductor devices? 2. How does the variation in channel widths and other properties based on device type impact the overall performance of the semiconductor device?
Original Abstract Submitted
some implementations described herein provide a semiconductor device and methods of formation. the semiconductor device may include one or more device types, such as a static random access memory device type, a ring oscillator device type, and/or an input/output device type. a device type may include an n-type metal oxide semiconductor nanostructure transistor and a p-type metal oxide semiconductor nanostructure transistor. in such a case, nanostructure channels of the n-type metal oxide semiconductor nanostructure transistor may have a width that is lesser relative to a width of nanostructure channels of the p-type metal oxide semiconductor nanostructure transistor. additionally, or alternatively, other properties of the nanostructure transistors, such as a gate length or a width of a source/drain region, may vary based on the device type.
