Taiwan semiconductor manufacturing company, ltd. (20240379752). FIELD EFFECT TRANSISTOR WITH INACTIVE FIN AND METHOD simplified abstract
Contents
FIELD EFFECT TRANSISTOR WITH INACTIVE FIN AND METHOD
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuo-Cheng Chiang of Hsinchu (TW)
Kuan-Lun Cheng of Hsinchu (TW)
FIELD EFFECT TRANSISTOR WITH INACTIVE FIN AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379752 titled 'FIELD EFFECT TRANSISTOR WITH INACTIVE FIN AND METHOD
The abstract of the patent application describes a device with a substrate, a stack of semiconductor nanostructures, and a gate structure surrounding the nanostructures. Epitaxial regions and inactive fins are also present in the device.
- The device includes a substrate, a stack of semiconductor nanostructures, and a gate structure surrounding the nanostructures.
- Epitaxial regions laterally abut the sides of the stack, while inactive fins are physically separated by the gate structure.
- The first stack of semiconductor nanostructures is vertically overlying the substrate.
- The gate structure abuts the upper side and first and second lateral sides of the first stack.
- The first epitaxial region laterally abuts a third lateral side of the first stack.
- The second epitaxial region laterally abuts a fourth lateral side of the first stack.
- The first inactive fin laterally abuts the first epitaxial region.
- The second inactive fin laterally abuts the second epitaxial region and is physically separated from the first inactive fin by the gate structure.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices. - It may find applications in the field of nanoelectronics and integrated circuits.
Problems Solved: - This technology addresses the need for more efficient and compact semiconductor devices. - It solves challenges related to the integration of nanostructures in electronic devices.
Benefits: - Improved performance and efficiency in semiconductor devices. - Enhanced functionality and miniaturization of electronic components.
Commercial Applications: - This technology could be valuable in the semiconductor industry for the production of high-performance electronic devices. - It may have implications for the development of next-generation computing systems.
Questions about the technology: 1. How does the presence of epitaxial regions impact the performance of the semiconductor device? 2. What are the potential challenges in manufacturing devices with semiconductor nanostructures and gate structures?
Original Abstract Submitted
a device includes a substrate, a first stack of semiconductor nanostructures vertically overlying the substrate, and a gate structure surrounding the semiconductor nanostructures and abutting an upper side and first and second lateral sides of the first stack. a first epitaxial region laterally abuts a third lateral side of the first stack, and a second epitaxial region laterally abuts a fourth lateral side of the first stack. a first inactive fin laterally abuts the first epitaxial region, and a second inactive fin laterally abuts the second epitaxial region and is physically separated from the first inactive fin by the gate structure.
