Taiwan semiconductor manufacturing company, ltd. (20240379750). Nanostructure Field-Effect Transistor Device and Method of Forming simplified abstract

Nanostructure Field-Effect Transistor Device and Method of Forming

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Guan-Lin Chen of Baoshan Township (TW)

Kuo-Cheng Chiang of Zhubei City (TW)

Shi Ning Ju of Hsinchu (TW)

Jung-Chien Cheng of Tainan City (TW)

Chih-Hao Wang of Baoshan Township (TW)

Kuan-Lun Cheng of Hsinchu (TW)

Nanostructure Field-Effect Transistor Device and Method of Forming - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379750 titled 'Nanostructure Field-Effect Transistor Device and Method of Forming

The abstract describes a method of forming a semiconductor device involving a fin structure with alternating layers of semiconductor materials, a dummy gate structure, and source/drain regions separated from the fin by a dielectric layer.

• Formation of a fin structure protruding above a substrate with alternating layers of semiconductor materials.
• Creation of a dummy gate structure over the fin structure.
• Formation of openings in the fin structure on opposing sides of the dummy gate structure, extending through the layer stack into the fin.
• Deposition of a dielectric layer in the bottom portions of the openings.
• Creation of source/drain regions in the openings on the dielectric layer, separated from the fin by the dielectric layer.

Potential Applications: - Advanced semiconductor devices - High-performance electronics - Nanotechnology research

Problems Solved: - Improved performance and efficiency of semiconductor devices - Enhanced control over source/drain regions - Reduction of leakage currents

Benefits: - Increased device performance - Enhanced reliability - Potential for smaller and more efficient devices

Commercial Applications: Title: Advanced Semiconductor Device Manufacturing This technology could revolutionize the production of high-performance electronics, leading to faster and more efficient devices. The market implications include increased demand for advanced semiconductor manufacturing equipment and processes.

Prior Art: Readers can explore prior research in the field of semiconductor device manufacturing, particularly focusing on fin structures and source/drain region formation.

Frequently Updated Research: Stay updated on the latest advancements in semiconductor device manufacturing, especially in the development of novel materials and processes for enhancing device performance.

Questions about Semiconductor Device Manufacturing: 1. What are the key challenges in fabricating advanced semiconductor devices using fin structures? 2. How does the use of alternating layers of semiconductor materials impact the performance of the device?

Original Abstract Submitted

a method of forming a semiconductor device includes: forming a fin structure protruding above a substrate, where the fin structure comprises a fin and a layer stack overlying the fin, where the layer stack comprises alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin structure; forming openings in the fin structure on opposing sides of the dummy gate structure, where the openings extend through the layer stack into the fin; forming a dielectric layer in bottom portions of the openings; and forming source/drain regions in the openings on the dielectric layer, where the source/drain regions are separated from the fin by the dielectric layer.