Taiwan semiconductor manufacturing company, ltd. (20240379749). Source/Drain Isolation Structures For Leakage Prevention simplified abstract

Source/Drain Isolation Structures For Leakage Prevention

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yen-Yu Chen of Taichung City (TW)

Chung-Liang Cheng of Changhua County (TW)

Source/Drain Isolation Structures For Leakage Prevention - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379749 titled 'Source/Drain Isolation Structures For Leakage Prevention

Simplified Explanation

The patent application discusses gate-all-around (GAA) transistor structures designed to reduce leakage current and power consumption. These transistors feature a semiconductor layer with two source/drain (S/D) epitaxial structures separated by semiconductor nano-sheet layers and isolation structures. A gate stack surrounds the semiconductor nano-sheet layers.

• Semiconductor layer with two source/drain (S/D) epitaxial structures
• Semiconductor nano-sheet layers separating the S/D structures
• Isolation structures between the semiconductor layer and S/D structures
• Gate stack surrounding the semiconductor nano-sheet layers

Potential Applications

The technology could be applied in various electronic devices requiring low power consumption and reduced leakage current, such as smartphones, tablets, and laptops.

Problems Solved

The technology addresses issues related to leakage current and power consumption in semiconductor devices, improving overall efficiency and performance.

Benefits

- Lower leakage current - Reduced power consumption - Enhanced efficiency and performance of electronic devices

Commercial Applications

Title: Advanced Semiconductor Technology for Low-Power Devices This technology could be utilized in the semiconductor industry to develop energy-efficient and high-performance electronic devices, catering to the growing demand for sustainable and efficient technology solutions.

Questions about GAA Transistor Structures

What are the key features of GAA transistor structures?

GAA transistor structures feature a semiconductor layer with two source/drain epitaxial structures separated by semiconductor nano-sheet layers, isolation structures, and a gate stack.

How do GAA transistor structures improve efficiency in electronic devices?

GAA transistor structures help reduce leakage current and power consumption, leading to enhanced performance and energy efficiency in electronic devices.

Original Abstract Submitted

the present disclosure is directed to gate-all-around (gaa) transistor structures with a low level of leakage current and low power consumption. for example, the gaa transistor includes a semiconductor layer with a first source/drain (s/d) epitaxial structure and a second s/d epitaxial structure disposed thereon, where the first and second s/d epitaxial structures are spaced apart by semiconductor nano-sheet layers. the semiconductor structure further includes isolation structures interposed between the semiconductor layer and each of the first and second s/d epitaxial structures. the gaa transistor further includes a gate stack surrounding the semiconductor nano-sheet layers.