Taiwan semiconductor manufacturing company, ltd. (20240379748). Bonding and Isolation Techniques for Stacked Transistor Structures simplified abstract

Bonding and Isolation Techniques for Stacked Transistor Structures

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Kuan-Kan Hu of Hsinchu (TW)

Han-De Chen of Hsinchu City (TW)

Ku-Feng Yang of Hsinchu County (TW)

Chen-Fong Tsai of Hsinchu City (TW)

Chi On Chui of Hsinchu City (TW)

Szuya Liao of Hsinchu (TW)

Bonding and Isolation Techniques for Stacked Transistor Structures - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379748 titled 'Bonding and Isolation Techniques for Stacked Transistor Structures

The abstract of this patent application describes techniques for bonding and isolating stacked device structures. The method involves forming insulation layers on two device components and bonding them together to create a stacked structure with an isolation structure in between.

• The method includes forming a first insulation layer on a first device component and a second insulation layer on a second device component.
• The first and second insulation layers are then bonded together to create a stacked structure.
• The isolation structure formed by the bonded insulation layers separates the first and second device components.
• The isolation structure has two portions with different compositions, providing effective isolation between the devices.
• The stacked structure is further processed to form a first device over a second device, with the isolation structure separating them.

Potential Applications: - This technology can be used in the semiconductor industry for creating stacked device structures with improved isolation. - It can also be applied in microelectronics for enhancing the performance and reliability of stacked devices.

Problems Solved: - Provides a solution for effectively bonding and isolating stacked device structures. - Ensures reliable performance and functionality of stacked devices.

Benefits: - Improved isolation between stacked devices. - Enhanced performance and reliability of stacked structures. - Enables the creation of more complex and efficient device configurations.

Commercial Applications: Title: Advanced Bonding and Isolation Techniques for Stacked Device Structures This technology has potential commercial applications in the semiconductor and microelectronics industries for developing advanced stacked device structures with enhanced isolation and performance. It can be utilized in the production of high-tech electronic devices for various applications.

Questions about Advanced Bonding and Isolation Techniques for Stacked Device Structures:

1. How does this technology improve the reliability of stacked device structures?

  - This technology enhances reliability by providing effective isolation between stacked devices, preventing interference and ensuring optimal performance.

2. What are the key benefits of using this method for bonding and isolating stacked device structures?

  - The key benefits include improved isolation, enhanced performance, and the ability to create more complex device configurations with reliable functionality.

Original Abstract Submitted

bonding and isolation techniques for stacked device structures are disclosed herein. an exemplary method includes forming a first insulation layer on a first device component, forming a second insulation layer on a second device component, and bonding the first insulation layer and the second insulation layer. the bonding provides a stacked structure that includes the first device component over the second device component, and an isolation structure (formed by the first insulation layer bonded to the second insulation layer) therebetween. the isolation structure includes a first portion having a first composition and a second portion having a second composition different than the first composition. the method further includes processing the stacked structure to form a first device disposed over a second device, where the isolation structure separates the first device and the second device. the first insulation layer and the second insulation layer may include the same or different materials.