Taiwan semiconductor manufacturing company, ltd. (20240379744). DIELECTRIC FINS WITH AIR GAP AND BACKSIDE SELF-ALIGNED CONTACT simplified abstract

From WikiPatents
Revision as of 01:46, 25 November 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

DIELECTRIC FINS WITH AIR GAP AND BACKSIDE SELF-ALIGNED CONTACT

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Ko-Cheng Liu of Hsinchu (TW)

Ming-Shuan Li of Hsinchu County (TW)

Ming-Lung Cheng of Kaohsiung County (TW)

Chang-Miao Liu of Hsinchu (TW)

DIELECTRIC FINS WITH AIR GAP AND BACKSIDE SELF-ALIGNED CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379744 titled 'DIELECTRIC FINS WITH AIR GAP AND BACKSIDE SELF-ALIGNED CONTACT

The semiconductor structure described in the patent application includes a power rail, a dielectric layer, a first source/drain feature, a via structure, and two dielectric fins.

  • The power rail provides electrical power to the structure.
  • The dielectric layer acts as insulation over the power rail.
  • The first source/drain feature is positioned over the dielectric layer.
  • The via structure connects the first source/drain feature to the power rail.
  • The dielectric fins are located on both sides of the first source/drain feature and consist of seal spacers, a dielectric bottom cover, a dielectric top cover, and an air gap.

Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices. - It may find applications in the development of high-performance electronic components.

Problems Solved: - Provides improved electrical connectivity and insulation in semiconductor structures. - Enhances the overall performance and reliability of electronic devices.

Benefits: - Increased efficiency and reliability of semiconductor devices. - Enhanced electrical connectivity and insulation properties. - Potential for higher performance in electronic components.

Commercial Applications: Title: Advanced Semiconductor Structure for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It may also have applications in the automotive and aerospace industries for advanced electronic systems.

Prior Art: Readers interested in exploring prior art related to this technology may refer to patents or research papers on semiconductor device structures, dielectric materials, and advanced electronic packaging techniques.

Frequently Updated Research: Researchers in the field of semiconductor technology are constantly working on improving the performance and efficiency of electronic devices. Stay updated on the latest advancements in semiconductor materials, device structures, and manufacturing processes to understand the evolving landscape of this technology.

Questions about Semiconductor Structures: 1. What are the key components of a semiconductor structure? Semiconductor structures typically consist of power rails, dielectric layers, source/drain features, via structures, and other components that enable the functioning of electronic devices.

2. How does the design of dielectric fins contribute to the performance of semiconductor structures? Dielectric fins play a crucial role in providing insulation and enhancing electrical connectivity in semiconductor structures, thereby improving overall device performance.


Original Abstract Submitted

a semiconductor structure includes a power rail, a dielectric layer over the power rail, a first source/drain feature over the dielectric layer, a via structure extending through the dielectric layer and electrically connecting the first source/drain feature to the power rail, and two dielectric fins disposed on both sides of the first source/drain feature. each of the dielectric fins includes two seal spacers, a dielectric bottom cover between bottom portions of the seal spacers, a dielectric top cover between top portions of the seal spacers, and an air gap surrounded by the seal spacers, the dielectric bottom cover, and the dielectric top cover.