Taiwan semiconductor manufacturing company, ltd. (20240379740). STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH GATE STACK simplified abstract
Contents
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH GATE STACK
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Lin Wang of Hsinchu County (TW)
Kang-Min Kuo of Hsinchu County (TW)
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH GATE STACK - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379740 titled 'STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH GATE STACK
- Simplified Explanation:**
The patent application describes the structures and formation methods of a semiconductor device structure, including a gate stack with a gate dielectric layer, a work function layer, and a halogen source layer.
- Key Features and Innovation:**
- Semiconductor device structure with gate stack layers.
- Gate dielectric layer between semiconductor substrate and work function layer.
- Halogen source layer included in the structure.
- Potential Applications:**
This technology can be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
- Problems Solved:**
This technology addresses the need for improved performance and efficiency in semiconductor devices by optimizing the gate stack structure.
- Benefits:**
- Enhanced performance of semiconductor devices.
- Improved efficiency in electronic circuits.
- Potential for smaller and more powerful devices.
- Commercial Applications:**
The technology can be utilized in the production of high-performance electronic devices for various industries, including telecommunications, computing, and consumer electronics.
- Prior Art:**
Researchers can explore prior patents related to gate stack structures in semiconductor devices to understand the evolution of this technology.
- Frequently Updated Research:**
Ongoing research in semiconductor materials and device structures may provide further advancements in this field.
- Questions about Semiconductor Device Structure:**
1. What are the key components of a gate stack in a semiconductor device structure?
- The key components include a gate dielectric layer, a work function layer, and a halogen source layer.
2. How does the inclusion of a halogen source layer impact the performance of the semiconductor device?
- The halogen source layer can help optimize the properties of the gate stack, leading to improved device performance.
Original Abstract Submitted
structures and formation methods of a semiconductor device structure are provided. the semiconductor device structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. the gate stack includes a gate dielectric layer and a work function layer. the gate dielectric layer is between the semiconductor substrate and the work function layer. the semiconductor device structure also includes a halogen source layer. the gate dielectric layer is between the semiconductor substrate and the halogen source layer.
