Taiwan semiconductor manufacturing company, ltd. (20240379734). METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Tsung-Chieh Hsiao of Shetou Township (TW)
Hsiang-Ku Shen of Hsinchu City (TW)
Yuan-Yang Hsiao of Taipei (TW)
Ying-Yao Lai of Taichung City (TW)
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379734 titled 'METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application features a metal-insulator-metal (MIM) capacitor, which includes electrodes and insulating layers between them. The MIM capacitor is situated in an interlayer dielectric (ILD) layer above a substrate, with the electrodes connected to via electrodes in the ILD layer.
- The MIM capacitor consists of electrodes, insulating layers, and high-k dielectric materials.
- The electrodes are connected to via electrodes in the ILD layer.
- The device is a semiconductor with a specific capacitor design for improved performance.
- The technology aims to enhance the functionality of semiconductor devices.
- The innovation focuses on optimizing the capacitor structure within the semiconductor device.
Potential Applications: This technology can be applied in various semiconductor devices, such as integrated circuits, memory devices, and microprocessors.
Problems Solved: The technology addresses the need for efficient and reliable capacitors in semiconductor devices.
Benefits: Improved performance, enhanced functionality, and increased reliability of semiconductor devices.
Commercial Applications: This technology can be utilized in the manufacturing of advanced electronic devices, leading to improved performance and reliability in the market.
Prior Art: Researchers can explore prior patents related to semiconductor capacitor designs and materials to understand the evolution of this technology.
Frequently Updated Research: Researchers are continually exploring new materials and designs to enhance the performance of semiconductor devices with capacitors.
Questions about Semiconductor Device with MIM Capacitor: 1. How does the MIM capacitor design impact the overall performance of the semiconductor device?
- The MIM capacitor design influences the capacitance, efficiency, and reliability of the semiconductor device.
2. What are the key factors to consider when implementing high-k dielectric materials in semiconductor devices?
- The selection of high-k dielectric materials should be based on factors like performance requirements, compatibility, and reliability.
Original Abstract Submitted
a semiconductor device includes a metal-insulator-metal (mim) capacitor. the mim capacitor includes: electrodes including one or more first electrodes and one or more second electrodes; and one or more insulating layers disposed between adjacent electrodes. the mim capacitor is disposed in an interlayer dielectric (ild) layer disposed over a substrate. the one or more first electrodes are connected to a side wall of a first via electrode disposed in the ild layer, and the one or more second electrodes are connected to a side wall of a second via electrode disposed in the ild layer. in one or more of the foregoing or following embodiments, the one or more insulating layers include a high-k dielectric material.
