Taiwan semiconductor manufacturing company, ltd. (20240379732). MULTI-LAYERED RESISTOR WITH A TIGHT TEMPERATURE COEFFICIENT OF RESISTANCE TOLERANCE simplified abstract

From WikiPatents
Revision as of 01:46, 25 November 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

MULTI-LAYERED RESISTOR WITH A TIGHT TEMPERATURE COEFFICIENT OF RESISTANCE TOLERANCE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Szu-Hsien Lo of Hsinchu County (TW)

Che-Hung Liu of Hsinchu City (TW)

Tzu-Chung Tsai of Hsinchu County (TW)

MULTI-LAYERED RESISTOR WITH A TIGHT TEMPERATURE COEFFICIENT OF RESISTANCE TOLERANCE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379732 titled 'MULTI-LAYERED RESISTOR WITH A TIGHT TEMPERATURE COEFFICIENT OF RESISTANCE TOLERANCE

The abstract of this patent application describes an integrated chip (IC) with a resistor structure comprising metal nitride and metal layers on a substrate.

  • The IC includes a resistor with a first metal nitride structure, a second metal nitride structure, and a metal layer in between.
  • A dielectric structure is placed over the substrate and the resistor.
  • The design aims to improve the performance and functionality of the IC.

Potential Applications:

  • This technology can be used in various electronic devices requiring resistors.
  • It can enhance the efficiency and reliability of integrated circuits in different applications.

Problems Solved:

  • Addresses the need for improved resistor structures in ICs.
  • Enhances the overall performance and functionality of electronic devices.

Benefits:

  • Improved performance and functionality of integrated circuits.
  • Enhanced efficiency and reliability of electronic devices.

Commercial Applications:

  • This technology can be utilized in the semiconductor industry for manufacturing advanced integrated circuits.
  • It has potential applications in consumer electronics, telecommunications, and automotive industries.

Questions about the technology: 1. How does the resistor structure in this IC differ from traditional designs? 2. What are the specific advantages of using metal nitride structures in resistors?

Frequently Updated Research:

  • Stay updated on advancements in resistor technology for integrated circuits to further enhance performance and functionality.


Original Abstract Submitted

various embodiments of the present disclosure are directed towards an integrated chip (ic). the ic comprises a substrate. a resistor overlies the substrate. the resistor comprises a first metal nitride structure, a second metal nitride structure spaced from the first metal nitride structure, and a metal structure disposed between the first metal nitride structure and the second metal nitride structure. a first dielectric structure is disposed over the substrate and the resistor.

Retrieved from "http://wikipatents.org/index.php?title=Taiwan_semiconductor_manufacturing_company,_ltd._(20240379732)._MULTI-LAYERED_RESISTOR_WITH_A_TIGHT_TEMPERATURE_COEFFICIENT_OF_RESISTANCE_TOLERANCE_simplified_abstract&oldid=258885"