Taiwan semiconductor manufacturing company, ltd. (20240379727). Method of Forming Semiconductor Device simplified abstract
Contents
Method of Forming Semiconductor Device
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chi-Ming Lu of Kaohsiung City (TW)
Yao-Hsiang Liang of Shinchu (TW)
Sheng-Chan Li of Tainan City (TW)
Jung-Chih Tsao of Hsin-Chu (TW)
Chih-Hui Huang of Shinchu (TW)
Method of Forming Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379727 titled 'Method of Forming Semiconductor Device
The method described in the patent application involves the fabrication of a semiconductor device by layering two films with different stress types and intensities over a substrate. The second film compensates for the stress induced by the non-flatness of the substrate caused by the first film.
- The method involves forming a first film with a specific stress type and intensity over a substrate.
- A second film with a different stress type but similar intensity is then formed over the first film.
- The second film helps to counteract the stress effects caused by the non-flatness of the substrate due to the first film.
Potential Applications: - Semiconductor manufacturing - Electronics industry - Nanotechnology research
Problems Solved: - Addressing stress-induced effects on semiconductor devices - Improving the overall quality and performance of semiconductor components
Benefits: - Enhanced reliability of semiconductor devices - Improved functionality and longevity of electronic products - Potential cost savings in manufacturing processes
Commercial Applications: Title: Advanced Semiconductor Device Fabrication Method This technology could be utilized in the production of high-performance electronic devices, leading to improved product quality and potentially opening up new market opportunities in the semiconductor industry.
Prior Art: Readers interested in exploring prior art related to this technology may consider researching patents or publications in the field of semiconductor fabrication, stress compensation techniques, and substrate engineering.
Frequently Updated Research: Researchers in the field of semiconductor manufacturing may find ongoing studies on stress management techniques, substrate materials, and film deposition methods relevant to this technology.
Questions about Semiconductor Device Fabrication Method: 1. How does the stress compensation technique in this method improve the performance of semiconductor devices? 2. What are the potential challenges in implementing this fabrication method on an industrial scale?
Original Abstract Submitted
a method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. the second film stress type is different than the first film stress type. the second film stress intensity is about same as the first film stress intensity. the second film compensates stress induced effect of non-flatness of the substrate by the first film.
