Taiwan semiconductor manufacturing company, ltd. (20240379726). DOPED SEMICONDUCTOR STRUCTURE FOR NIR SENSORS simplified abstract

DOPED SEMICONDUCTOR STRUCTURE FOR NIR SENSORS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Po-Chun Liu of Hsinchu City (TW)

Eugene I-Chun Chen of Taipei City (TW)

DOPED SEMICONDUCTOR STRUCTURE FOR NIR SENSORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379726 titled 'DOPED SEMICONDUCTOR STRUCTURE FOR NIR SENSORS

The present disclosure pertains to an integrated chip structure with a base substrate containing a recess, an epitaxial material within the recess, and doped photodiode regions within the epitaxial material.

• The integrated chip structure includes a base substrate with a recess on its upper surface.
• An epitaxial material is placed within the recess.
• There are first and second doped photodiode regions within the epitaxial material, each with different doping types.
• The second doped photodiode region surrounds the first doped photodiode region laterally.
• A doped epitaxial layer is positioned between the base substrate and the epitaxial material, having the same doping type as the second doped photodiode region.

Potential Applications: - This technology can be used in the development of advanced semiconductor devices. - It may find applications in the field of optoelectronics for light detection purposes.

Problems Solved: - Provides a compact and efficient structure for integrating photodiode regions within a chip. - Offers improved performance and functionality in semiconductor devices.

Benefits: - Enhanced functionality and performance in semiconductor devices. - Compact design for efficient integration of photodiode regions.

Commercial Applications: Title: Advanced Semiconductor Devices with Integrated Photodiode Regions This technology can be utilized in the production of high-performance sensors, imaging devices, and optical communication systems.

Questions about the technology: 1. How does the integration of photodiode regions within the chip structure improve device performance? 2. What are the potential challenges in manufacturing chips with such integrated structures?

Original Abstract Submitted

the present disclosure relates an integrated chip structure. the integrated chip structure includes a base substrate having one or more interior surfaces defining a recess within an upper surface of the base substrate. an epitaxial material is disposed within the recess. a first doped photodiode region is disposed within the epitaxial material and has a first doping type. a second doped photodiode region is disposed within the epitaxial material and has a second doping type. the second doped photodiode region laterally surrounds the first doped photodiode region. a doped epitaxial layer is disposed horizontally and vertically between the base substrate and the epitaxial material. the doped epitaxial layer has the second doping type.