Taiwan semiconductor manufacturing company, ltd. (20240379724). CAPPING STRUCTURE TO REDUCE DARK CURRENT IN IMAGE SENSORS simplified abstract
Contents
CAPPING STRUCTURE TO REDUCE DARK CURRENT IN IMAGE SENSORS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Po-Chun Liu of Hsinchu City (TW)
Eugene Chen of Taipei City (TW)
CAPPING STRUCTURE TO REDUCE DARK CURRENT IN IMAGE SENSORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379724 titled 'CAPPING STRUCTURE TO REDUCE DARK CURRENT IN IMAGE SENSORS
The semiconductor device described in the abstract includes an epitaxial structure on a semiconductor substrate, with a photodetector within the epitaxial structure. Two capping layers are present, with the first covering the epitaxial structure and extending past its outermost sidewalls, while the second is positioned vertically between the first capping layer and the epitaxial structure.
- The semiconductor device features an epitaxial structure and a photodetector for enhanced functionality.
- Two capping layers provide protection and structural support to the device.
- The first capping layer extends laterally past the epitaxial structure's outermost sidewalls for added coverage and stability.
- Potential Applications:
This technology could be utilized in the development of advanced photodetectors, sensors, and other semiconductor devices requiring precise control and protection.
- Problems Solved:
This innovation addresses the need for improved performance and reliability in semiconductor devices by incorporating a unique capping layer design.
- Benefits:
- Enhanced functionality and performance in semiconductor devices - Improved structural support and protection for sensitive components - Potential for increased durability and longevity of the device
- Commercial Applications:
The technology could find applications in industries such as telecommunications, aerospace, and medical devices, where high-performance semiconductor devices are essential for various applications.
- Prior Art:
Readers interested in exploring prior art related to this technology may refer to research articles and patents in the field of semiconductor device design and fabrication.
- Frequently Updated Research:
Stay updated on the latest advancements in semiconductor device technology, epitaxial structures, and photodetector innovations to further enhance the understanding and potential applications of this technology.
- Questions about Semiconductor Devices:
1. What are the key components of a semiconductor device, and how do they contribute to its functionality? 2. How does the design of capping layers impact the performance and reliability of semiconductor devices?
Original Abstract Submitted
in some embodiments, a semiconductor device is provided. the semiconductor device includes an epitaxial structure disposed on a semiconductor substrate. a photodetector is disposed at least partially in the epitaxial structure. a first capping layer is disposed on the semiconductor substrate and covers the epitaxial structure. a second capping layer is disposed vertically between the first capping layer and the epitaxial structure. the first capping layer extends laterally past outermost sidewalls of the epitaxial structure and the second capping layer.
