Taiwan semiconductor manufacturing company, ltd. (20240379721). HIGH REFLECTANCE ISOLATION STRUCTURE TO INCREASE IMAGE SENSOR PERFORMANCE simplified abstract
Contents
HIGH REFLECTANCE ISOLATION STRUCTURE TO INCREASE IMAGE SENSOR PERFORMANCE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Sheng-Chan Li of Tainan City (TW)
Hau-Yi Hsiao of Chiayi City (TW)
Sheng-Chau Chen of Tainan City (TW)
Cheng-Yuan Tsai of Chu-Pei City (TW)
HIGH REFLECTANCE ISOLATION STRUCTURE TO INCREASE IMAGE SENSOR PERFORMANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379721 titled 'HIGH REFLECTANCE ISOLATION STRUCTURE TO INCREASE IMAGE SENSOR PERFORMANCE
The abstract of this patent application describes an image sensor with a semiconductor substrate containing photodetectors and an isolation structure between them.
- The image sensor includes a metal core, a conductive liner, and a dielectric liner in the isolation structure.
- The metal core and conductive liner are made of different metal materials to enhance isolation between photodetectors.
- The innovation aims to improve the performance and efficiency of image sensors by reducing crosstalk and interference between photodetectors.
Potential Applications:
- This technology can be used in digital cameras, smartphones, and other devices with image sensors.
- It can also be applied in medical imaging equipment, security cameras, and automotive cameras.
Problems Solved:
- Reduces crosstalk and interference between photodetectors in image sensors.
- Improves the overall image quality and accuracy of image capture.
Benefits:
- Enhanced image sensor performance and efficiency.
- Higher quality images with reduced noise and interference.
- Improved functionality in various imaging applications.
Commercial Applications:
- This technology can be utilized in the consumer electronics industry for developing advanced cameras and imaging devices.
- It can also benefit the medical imaging sector for enhancing diagnostic equipment.
Questions about the Technology: 1. How does the use of different metal materials in the isolation structure improve the performance of image sensors? 2. What are the specific challenges in reducing crosstalk and interference between photodetectors in image sensors?
Original Abstract Submitted
various embodiments of the present disclosure are directed towards an image sensor having a semiconductor substrate comprising a front-side surface opposite a back-side surface. a plurality of photodetectors is disposed in the semiconductor substrate. an isolation structure extends into the back-side surface of the semiconductor substrate and is disposed between adjacent photodetectors. the isolation structure includes a metal core, a conductive liner disposed between the semiconductor substrate and the metal core, and a first dielectric liner disposed between the conductive liner and the semiconductor substrate. the metal core comprises a first metal material and the conductive liner comprises the first metal material and a second metal material different from the first metal material.
