Taiwan semiconductor manufacturing company, ltd. (20240379720). LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES simplified abstract
Contents
LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Seiji Takahashi of Hsinchu City (TW)
Jhy-Jyi Sze of Hsin-Chu City (TW)
LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379720 titled 'LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES
Simplified Explanation: The patent application is for an image sensor that includes a first semiconductor substrate with a photodetector and a floating diffusion node. A transfer gate is positioned over the first semiconductor substrate, with a second semiconductor substrate vertically spaced from the first one. A readout transistor is located on the second semiconductor substrate, and a first conductive contact is electrically connected to the transfer gate.
- The image sensor has a unique design with a floating diffusion node and transfer gate.
- The second semiconductor substrate houses the readout transistor and a first conductive contact.
- The transfer gate is positioned between the photodetector and the readout transistor.
- The first conductive contact extends vertically from the transfer gate through both semiconductor substrates.
- This design aims to improve the performance and efficiency of the image sensor.
Potential Applications: This technology can be used in digital cameras, smartphones, security cameras, and other devices that require image sensors for capturing photos or videos.
Problems Solved: The technology addresses the need for improved image sensor performance, efficiency, and image quality in various electronic devices.
Benefits: The benefits of this technology include enhanced image quality, improved sensor performance, and increased efficiency in capturing and processing images.
Commercial Applications: The technology can be applied in the consumer electronics industry for developing advanced cameras, smartphones, and security systems with high-quality image sensors.
Prior Art: Readers can explore prior art related to image sensors, semiconductor substrates, and photodetectors to understand the evolution of this technology.
Frequently Updated Research: Researchers may be conducting studies on enhancing image sensor technology, optimizing semiconductor substrates, and improving photodetector performance.
Questions about Image Sensor Technology: 1. How does the design of this image sensor differ from traditional image sensor technologies? 2. What potential advancements can be expected in image sensor technology in the future?
Original Abstract Submitted
various embodiments of the present disclosure are directed towards an image sensor. the image sensor includes a first semiconductor substrate having a photodetector and a floating diffusion node. a transfer gate is disposed over the first semiconductor substrate, where the transfer gate is at least partially disposed between opposite sides of the photodetector. a second semiconductor substrate is vertically spaced from the first semiconductor substrate, where the second semiconductor substrate comprises a first surface and a second surface opposite the first surface. a readout transistor is disposed on the second semiconductor substrate, where the second surface is disposed between the transfer gate and a gate of the readout transistor. a first conductive contact is electrically coupled to the transfer gate and extending vertically from the transfer gate through both the first surface and the second surface.
