Taiwan semiconductor manufacturing company, ltd. (20240379714). DEEP TRENCH ISOLATION FOR CROSS-TALK REDUCTION simplified abstract
Contents
DEEP TRENCH ISOLATION FOR CROSS-TALK REDUCTION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng Yu Huang of Hsinchu (TW)
Wei-Chieh Chiang of Yuanlin Township (TW)
Keng-Yu Chou of Kaohsiung City (TW)
Chun-Hao Chuang of Hsinchu City (TW)
Wen-Hau Wu of New Taipei City (TW)
Chih-Kung Chang of Zhudong Township (TW)
DEEP TRENCH ISOLATION FOR CROSS-TALK REDUCTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379714 titled 'DEEP TRENCH ISOLATION FOR CROSS-TALK REDUCTION
The abstract describes a patent application related to a CMOS image sensor on a substrate with pixel regions containing photodiodes to receive radiation. The sensor includes a boundary deep trench isolation (BDTI) structure with segments surrounding the photodiode, and a pixel deep trench isolation (PDTI) structure within the BDTI structure and overlying the photodiode.
- BDTI structure with segments surrounding photodiodes
- PDTI structure within BDTI structure and overlying photodiodes
- Different materials used in BDTI and PDTI structures
- Segments extending in different directions to surround photodiodes
- Designed to improve performance and efficiency of CMOS image sensors
Potential Applications: - High-resolution cameras - Medical imaging devices - Security cameras - Automotive cameras - Industrial inspection systems
Problems Solved: - Improved isolation between pixel regions - Enhanced performance of photodiodes - Reduction of crosstalk between pixels
Benefits: - Higher image quality - Increased sensitivity to light - Reduced noise in images - Improved overall performance of image sensors
Commercial Applications: Title: "Advanced CMOS Image Sensors for High-Resolution Imaging Applications" This technology can be used in various commercial applications such as high-end smartphones, digital cameras, surveillance systems, and medical imaging devices. The market implications include improved image quality, better low-light performance, and increased efficiency in capturing detailed images.
Questions about CMOS Image Sensor Technology: 1. How does the use of different materials in the BDTI and PDTI structures contribute to the performance of the image sensor?
The use of different materials helps to optimize the isolation and efficiency of the photodiodes, leading to improved image quality and reduced noise in captured images.
2. What are the key advantages of having the BDTI and PDTI structures surrounding the photodiodes in the CMOS image sensor?
The BDTI and PDTI structures provide enhanced isolation and protection for the photodiodes, resulting in better performance and higher quality images.
Original Abstract Submitted
some embodiments relate to a cmos image sensor disposed on a substrate. a plurality of pixel regions comprising a plurality of photodiodes, respectively, are configured to receive radiation that enters a back-side of the substrate. a boundary deep trench isolation (bdti) structure is disposed at boundary regions of the pixel regions, and includes a first set of bdti segments extending in a first direction and a second set of bdti segments extending in a second direction perpendicular to the first direction to laterally surround the photodiode. the bdti structure comprises a first material. a pixel deep trench isolation (pdti) structure is disposed within the bdti structure and overlies the photodiode. the pdti structure comprises a second material that differs from the first material, and includes a first pdti segment extending in the first direction such that the first pdti segment is surrounded by the bdti structure.
