Taiwan semiconductor manufacturing company, ltd. (20240379713). BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR simplified abstract

BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yu-Hung Cheng of Tainan City (TW)

Chun-Tsung Kuo of Tainan City (TW)

Jiech-Fun Lu of Madou Township (TW)

Min-Ying Tsai of Kaohsiung City (TW)

Chiao-Chun Hsu of Tainan City (TW)

Ching I Li of Tainan (TW)

BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379713 titled 'BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR

The present disclosure pertains to an image sensor with a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, along with a method of formation.

• Photodiode in each pixel region converts radiation into an electrical signal.
• Photodiode consists of a doping column with one type of doping surrounded by a doping layer with a different type of doping.
• BDTI structure placed between pixel regions extends from the back-side of the sensor die into the photodiode doping layer.
• BDTI structure includes a doped liner with the second type of doping and a dielectric fill layer.

1. 1. 1. Potential Applications:

- Image sensors in digital cameras - Medical imaging devices - Surveillance cameras

1. 1. 1. Problems Solved:

- Isolation of photodiodes in an image sensor - Preventing crosstalk between adjacent pixel regions

1. 1. 1. Benefits:

- Improved image quality - Enhanced sensitivity to light - Reduction in noise levels

1. 1. 1. Commercial Applications:
         1. Title: Advanced Image Sensors for High-Resolution Cameras

This technology can be utilized in high-end digital cameras, medical imaging equipment, and surveillance systems to capture high-quality images with improved sensitivity and reduced noise levels.

1. 1. 1. Questions about Image Sensor Technology:
         1. 1. How does the BDTI structure improve the performance of the image sensor?

The BDTI structure helps in isolating the photodiodes in each pixel region, reducing crosstalk and improving the overall image quality.

1. 1. 1. 1. 2. What are the potential applications of image sensors with BDTI structures?

Image sensors with BDTI structures can be used in various devices such as digital cameras, medical imaging equipment, and surveillance systems to capture high-quality images with enhanced sensitivity.

Original Abstract Submitted

the present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (bdti) structure, and an associated method of formation. in some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. the photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. a bdti structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. the bdti structure comprises a doped liner with the second doping type and a dielectric fill layer. the doped liner lines a sidewall surface of the dielectric fill layer.