Taiwan semiconductor manufacturing company, ltd. (20240379712). BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR simplified abstract
Contents
BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng-Ta Wu of Shueishang Township (TW)
Kuo-Hwa Tzeng of Taipei City (TW)
BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379712 titled 'BACK-SIDE DEEP TRENCH ISOLATION STRUCTURE FOR IMAGE SENSOR
The present disclosure pertains to an image sensor with a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, along with a method of formation.
- Photodiode in each pixel region converts radiation into an electrical signal.
- Photodiode consists of a doping column with a first doping type surrounded by a doping layer with a different second doping type.
- BDTI structure placed between pixel regions extends from the back-side of the sensor die into the photodiode doping layer.
- BDTI structure includes a doped liner with the second doping type and a dielectric fill layer.
Potential Applications: - Image sensors in digital cameras - Medical imaging devices - Surveillance cameras
Problems Solved: - Isolation of photodiodes in image sensors - Prevention of crosstalk between adjacent pixel regions
Benefits: - Improved image quality - Enhanced sensitivity to light - Reduced noise in captured images
Commercial Applications: Title: Advanced Image Sensors for High-Resolution Cameras This technology can be used in high-end digital cameras, medical imaging equipment, and security cameras, enhancing their performance and image quality.
Questions about Image Sensor Technology: 1. How does the BDTI structure improve the performance of the image sensor? The BDTI structure isolates photodiodes, reducing crosstalk and improving image quality.
2. What are the potential commercial applications of this advanced image sensor technology? This technology can be utilized in various industries such as photography, healthcare, and surveillance for enhanced imaging capabilities.
Original Abstract Submitted
the present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (bdti) structure, and an associated method of formation. in some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. the photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. a bdti structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. the bdti structure comprises a doped liner with the second doping type and a dielectric fill layer. the doped liner lines a sidewall surface of the dielectric fill layer.
