Taiwan semiconductor manufacturing company, ltd. (20240379710). CSI WITH CONTROLLABLE ISOLATION STRUCTURE AND METHODS OF MANUFACTURING AND USING THE SAME simplified abstract
Contents
CSI WITH CONTROLLABLE ISOLATION STRUCTURE AND METHODS OF MANUFACTURING AND USING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Min-Feng Kao of Chiayi City (TW)
Dun-Nian Yaung of Taipei City (TW)
Jen-Cheng Liu of Hsin-Chu City (TW)
Wen-Chang Kuo of Tainan City (TW)
Shih-Han Huang of Kaohsiung City (TW)
CSI WITH CONTROLLABLE ISOLATION STRUCTURE AND METHODS OF MANUFACTURING AND USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379710 titled 'CSI WITH CONTROLLABLE ISOLATION STRUCTURE AND METHODS OF MANUFACTURING AND USING THE SAME
Simplified Explanation: The patent application describes a technology where a metal grid within a trench isolation structure on the back side of an image sensor is connected to a contact pad, allowing for the adjustment of voltage on the metal grid to optimize performance based on the application, environment, or mode of operation.
Key Features and Innovation:
- Metal grid within trench isolation structure on image sensor
- Continuous adjustment of voltage on metal grid via contact pad
- Conductive structures directly coupling metal grid to contact pad
- Dynamic adjustment of bias voltage for trade-off between reducing cross-talk and increasing quantum efficiency
Potential Applications: This technology can be applied in various image sensor devices, such as cameras, smartphones, and medical imaging equipment, to enhance performance and image quality.
Problems Solved: This technology addresses the challenge of optimizing image sensor performance in different operating conditions by dynamically adjusting the bias voltage on the metal grid.
Benefits:
- Improved image quality
- Enhanced performance in varying environments
- Increased flexibility in adjusting sensor parameters
Commercial Applications: The technology can be utilized in the development of high-quality imaging devices for consumer electronics, medical imaging, surveillance systems, and scientific research equipment.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching patents in the field of image sensor technology, semiconductor devices, and voltage control mechanisms.
Frequently Updated Research: Stay updated on the latest advancements in image sensor technology, semiconductor manufacturing processes, and voltage control systems to understand the evolving landscape of this innovation.
Questions about Metal Grid Voltage Adjustment Technology: 1. How does the dynamic adjustment of bias voltage impact the performance of image sensors? 2. What are the potential challenges in implementing this technology in different types of image sensor devices?
Original Abstract Submitted
a metal grid within a trench isolation structure on the back side of an image sensor is coupled to a contact pad so that a voltage on the metal grid is continuously variable with a voltage on the contact pad. one or more conductive structures directly couple the metal grid to a contact pad. the conductive structures may bypass a front side of the image sensor. a bias voltage on the metal grid may be varied through the contact pad whereby a trade-off between reducing cross-talk and increasing quantum efficiency may be adjusted dynamically in accordance with the application of the image sensor, its environment of use, or its mode of operation.
