Taiwan semiconductor manufacturing company, ltd. (20240379703). IMAGE SENSOR WITH SCATTERING STRUCTURE simplified abstract
Contents
IMAGE SENSOR WITH SCATTERING STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng Yu Huang of Hsinchu (TW)
Chun-Hao Chuang of Hsinchu (TW)
Keng-Yu Chou of Kaohsiung City (TW)
Wei-Chieh Chiang of Yuanlin Township (TW)
Wen-Hau Wu of New Taipei City (TW)
Chih-Kung Chang of Zhudong Township (TW)
IMAGE SENSOR WITH SCATTERING STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379703 titled 'IMAGE SENSOR WITH SCATTERING STRUCTURE
The present disclosure pertains to an integrated chip with a substrate and a pixel containing a photodetector within the substrate. The chip also includes inner and outer trench isolation structures surrounding the photodetector in closed loops, as well as a scattering structure to enhance radiation absorption.
- The integrated chip features a pixel with a photodetector embedded in the substrate.
- Inner and outer trench isolation structures surround the photodetector in closed loops, improving isolation.
- A scattering structure, defined by the inner trench isolation, enhances radiation absorption.
- The outer trench isolation structure is laterally separated from the inner structure, increasing efficiency.
- The design of the chip aims to optimize radiation impingement angles for improved performance.
Potential Applications: - Image sensors - Optical communication devices - Medical imaging equipment
Problems Solved: - Enhanced radiation absorption - Improved isolation for photodetectors - Optimal performance in various applications
Benefits: - Increased sensitivity - Enhanced image quality - Improved signal-to-noise ratio
Commercial Applications: Title: Advanced Image Sensor Technology for Enhanced Performance This technology can be utilized in various commercial applications such as digital cameras, security cameras, and medical imaging devices. The improved radiation absorption and isolation structures make it ideal for high-performance imaging systems.
Questions about the technology: 1. How does the scattering structure enhance radiation absorption? The scattering structure, defined by the inner trench isolation, is designed to increase the angle at which radiation impinges on the outer trench isolation structure, thereby improving absorption efficiency.
2. What are the main advantages of the inner and outer trench isolation structures? The inner and outer trench isolation structures provide enhanced isolation for the photodetector, reducing crosstalk and improving overall performance.
Original Abstract Submitted
the present disclosure relates to an integrated chip including a substrate and a pixel. the pixel includes a photodetector. the photodetector is in the substrate. the integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. the first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. the outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.
