Taiwan semiconductor manufacturing company, ltd. (20240379692). IMAGE SENSOR WITH DIFFUSION BARRIER STRUCTURE simplified abstract
Contents
IMAGE SENSOR WITH DIFFUSION BARRIER STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yu-Hung Cheng of Tainan City (TW)
Chen-Hao Chiang of Jhongli City (TW)
Eugene I-Chun Chen of Taipei City (TW)
Chin-Chia Kuo of Tainan City (TW)
IMAGE SENSOR WITH DIFFUSION BARRIER STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379692 titled 'IMAGE SENSOR WITH DIFFUSION BARRIER STRUCTURE
The present disclosure pertains to an integrated chip with a sensor semiconductor layer doped with a first dopant, a photodetector on the frontside, a backside semiconductor layer doped with a second dopant, and a diffusion barrier structure with a third dopant between the sensor semiconductor layer and the backside semiconductor layer.
- Sensor semiconductor layer doped with a first dopant
- Photodetector located on the frontside of the sensor semiconductor layer
- Backside semiconductor layer doped with a second dopant
- Diffusion barrier structure with a third dopant between the sensor semiconductor layer and the backside semiconductor layer
- Third dopant is different from the first and second dopants
Potential Applications: - Optical sensors - Semiconductor devices - Photodetector technology
Problems Solved: - Enhanced performance of integrated chips - Improved efficiency of photodetectors - Better control of dopant diffusion
Benefits: - Higher sensitivity in optical sensing applications - Increased reliability of semiconductor devices - Enhanced overall performance of integrated chips
Commercial Applications: Title: Advanced Photodetector Technology for Semiconductor Devices This technology can be utilized in the development of high-performance optical sensors, semiconductor devices, and integrated chips, catering to industries such as telecommunications, medical imaging, and consumer electronics.
Questions about the technology: 1. How does the integration of different dopants in the semiconductor layers improve the performance of the chip? 2. What specific advantages does the diffusion barrier structure with a third dopant offer in this integrated chip design?
Original Abstract Submitted
the present disclosure relates to an integrated chip. the integrated chip includes a sensor semiconductor layer. the sensor semiconductor layer is doped with a first dopant. a photodetector is along a frontside of the sensor semiconductor layer. a backside semiconductor layer is along a backside of the sensor semiconductor layer, opposite the frontside. the backside semiconductor layer is doped with a second dopant. a diffusion barrier structure is between the sensor semiconductor layer and the backside semiconductor layer. the diffusion barrier structure includes a third dopant different from the first dopant and the second dopant.
