Taiwan semiconductor manufacturing company, ltd. (20240379684). SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION STRUCTURE simplified abstract
Contents
SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yu-Hung Cheng of Tainan City (TW)
Cheng-Ta Wu of Shueishang Township (TW)
Po-Wei Liu of Tainan City (TW)
Yu-Chun Chang of Tainan City (TW)
SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379684 titled 'SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION STRUCTURE
The integrated chip described in the patent application includes a semiconductor device, a polysilicon isolation structure, and first and second insulator liners. The semiconductor device is located on the frontside of a substrate, with the polysilicon isolation structure surrounding it and extending towards the backside of the substrate. The insulator liners surround the outermost sidewalls of the polysilicon isolation structure, with a monocrystalline facet between them.
- Semiconductor device integrated with polysilicon isolation structure
- Insulator liners surrounding outermost sidewalls
- Monocrystalline facet within the substrate
- Top of monocrystalline facet above bottom surfaces of isolation structure and insulator liners
- Frontside to backside extension of isolation structure
Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Electronics industry
Problems Solved: - Enhanced isolation of semiconductor devices - Improved structural integrity - Better performance in integrated circuits
Benefits: - Increased reliability - Higher efficiency - Enhanced functionality
Commercial Applications: Title: Advanced Semiconductor Devices for Improved Performance This technology can be utilized in the production of high-performance integrated circuits for various electronic devices, such as smartphones, computers, and automotive systems. The improved isolation and structural design can lead to more reliable and efficient products, appealing to manufacturers looking to enhance the performance of their devices.
Questions about the technology: 1. How does the polysilicon isolation structure contribute to the overall performance of the semiconductor device? 2. What are the potential cost implications of implementing this technology in semiconductor manufacturing processes?
Original Abstract Submitted
in some embodiments, the present disclosure relates to an integrated chip that includes a semiconductor device, a polysilicon isolation structure, and a first and second insulator liner. the semiconductor device is disposed on a frontside of a substrate. the polysilicon isolation structure continuously surrounds the semiconductor device and extends from the frontside of the substrate towards a backside of the substrate. the first insulator liner and second insulator liner respectively surround a first outermost sidewall and a second outermost sidewall of the polysilicon isolation structure. the substrate includes a monocrystalline facet arranged between the first and second insulator liners. a top of the monocrystalline facet is above bottommost surfaces of the polysilicon isolation structure, the first insulator liner, and the second insulator liner.
