Taiwan semiconductor manufacturing company, ltd. (20240379682). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shahaji B. More of Hsinchu (TW)
Chandrashekhar Prakash Savant of Hsinchu (TW)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379682 titled 'SEMICONDUCTOR DEVICES
The abstract describes a device with multiple fins, gate spacers, gate dielectric, and a gate electrode.
- The device includes a first fin and a second fin extending from a substrate.
- A gate spacer is positioned over the first fin and the second fin.
- The gate dielectric has three portions extending along the sidewalls of the fins and the gate spacer.
- The gate electrode is located on the gate dielectric.
Potential Applications: - This technology can be used in semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits.
Problems Solved: - This technology addresses the need for improved semiconductor device structures. - It helps in achieving better control and functionality in electronic devices.
Benefits: - Improved performance and efficiency in semiconductor devices. - Enhanced control and functionality in electronic applications.
Commercial Applications: - This technology has potential commercial uses in the semiconductor industry for developing advanced electronic devices. - It can have market implications in the production of high-performance integrated circuits.
Questions about the Technology: 1. How does this device improve the performance of semiconductor devices?
This device enhances performance by providing better control and functionality in electronic applications.
2. What are the potential commercial applications of this technology?
The technology can be used in the semiconductor industry for developing advanced electronic devices.
Original Abstract Submitted
in an embodiment, a device includes: a first fin extending from a substrate; a second fin extending from the substrate; a gate spacer over the first fin and the second fin; a gate dielectric having a first portion, a second portion, and a third portion, the first portion extending along a first sidewall of the first fin, the second portion extending along a second sidewall of the second fin, the third portion extending along a third sidewall of the gate spacer, the third portion and the first portion forming a first acute angle, the third portion and the second portion forming a second acute angle; and a gate electrode on the gate dielectric.
