Taiwan semiconductor manufacturing company, ltd. (20240379681). Multi-Gate Device Integration with Separated Fin-Like Field Effect Transistor Cells and Gate-All-Around Transistor Cells simplified abstract

Multi-Gate Device Integration with Separated Fin-Like Field Effect Transistor Cells and Gate-All-Around Transistor Cells

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhon Jhy Liaw of Hsinchu County (TW)

Multi-Gate Device Integration with Separated Fin-Like Field Effect Transistor Cells and Gate-All-Around Transistor Cells - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379681 titled 'Multi-Gate Device Integration with Separated Fin-Like Field Effect Transistor Cells and Gate-All-Around Transistor Cells

Simplified Explanation: This patent application discloses an integrated circuit with a unique layout and the method of manufacturing it. The circuit includes different types of gate-all-around transistors and fin-like field effect transistors in specific regions.

• The integrated circuit comprises different types of gate-all-around transistors in specific regions.
• The first cell contains one or more first type gate-all-around transistors, while the second cell contains one or more second type gate-all-around transistors, both located in the same region.
• The first type gate-all-around transistors are either nanosheet transistors or nanowire transistors, while the second type gate-all-around transistors are the other type.
• Additionally, the circuit includes fin-like field effect transistors located in a different region of the integrated circuit.

Potential Applications: 1. Advanced semiconductor devices. 2. High-performance computing systems. 3. Next-generation electronics.

Problems Solved: 1. Enhancing performance and efficiency of integrated circuits. 2. Improving the functionality of semiconductor devices. 3. Enabling the development of more powerful electronic systems.

Benefits: 1. Increased speed and reliability of electronic devices. 2. Greater energy efficiency. 3. Enhanced overall performance of integrated circuits.

Commercial Applications: Advanced Semiconductor Technologies for Next-Generation Electronics

Prior Art: Prior research in the field of semiconductor device manufacturing and integrated circuit design may provide insights into similar technologies and advancements.

Frequently Updated Research: Ongoing research in semiconductor technology and integrated circuit design may offer new developments and improvements in this area.

Questions about Integrated Circuits: 1. What are the key advantages of using gate-all-around transistors in integrated circuits? 2. How do nanosheet transistors differ from nanowire transistors in terms of performance and efficiency?

Original Abstract Submitted

integrated circuit having an integration layout and the manufacturing method thereof are disclosed herein. an exemplary integrated circuit (ic) comprises a first cell including one or more first type gate-all-around (gaa) transistors located in a first region of the integrated circuit; a second cell including one or more second type gaa transistors located in the first region of the integrated circuit, wherein the second cell is disposed adjacently to the first cell, wherein the first type gaa transistors are one of nanosheet transistors or nanowire transistors and the second type gaa transistors are the other one of nanosheet transistors or nanowire transistors; and a third cell including one or more fin-like field effect transistors (finfets) located in a second region of the integrated circuit, wherein the second region is disposed a distance from the first region of the integrated circuit.