Taiwan semiconductor manufacturing company, ltd. (20240379678). Semiconductor Devices and Methods of Fabricating the Same simplified abstract

Semiconductor Devices and Methods of Fabricating the Same

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Ming-Shuan Li of Hsinchu County (TW)

Tsung-Lin Lee of Hsinchu City (TW)

Chih Chieh Yeh of Taipei City (TW)

Semiconductor Devices and Methods of Fabricating the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379678 titled 'Semiconductor Devices and Methods of Fabricating the Same

Simplified Explanation:

This patent application describes a semiconductor structure with multiple channel members, gate structures wrapping around each channel member, and a dielectric fin structure adjacent to the gate structure.

• The semiconductor structure includes channel members, gate structures, and a dielectric fin structure.
• The dielectric fin structure consists of three dielectric layers and an isolation feature.
• The first dielectric layer is in direct contact with the gate structure.
• The second dielectric layer is placed over the first dielectric layer.
• The third dielectric layer is spaced apart from the gate structure by the second dielectric layer.
• An isolation feature is located directly over the third dielectric layer.

Potential Applications:

This semiconductor structure could be used in various electronic devices such as transistors, integrated circuits, and other semiconductor components.

Problems Solved:

This technology addresses the need for improved semiconductor structures with enhanced performance and reliability.

Benefits:

The benefits of this technology include better control over the flow of electrical current, increased efficiency, and reduced power consumption in electronic devices.

Commercial Applications:

Potential commercial applications of this technology include the production of high-performance electronic devices for consumer electronics, telecommunications, and computing industries.

Prior Art:

Researchers interested in this technology may want to explore prior art related to semiconductor structures, dielectric materials, and gate structures in semiconductor devices.

Frequently Updated Research:

Researchers in the field of semiconductor technology are constantly working on improving the performance and efficiency of semiconductor structures, including dielectric fin structures.

Questions about Semiconductor Structures: 1. How does the dielectric fin structure in this semiconductor technology improve device performance? 2. What are the key differences between traditional semiconductor structures and the structure described in this patent application?

Original Abstract Submitted

a semiconductor structure and a method of forming the same are provided. in an embodiment, an exemplary semiconductor structure includes a number of channel members over a substrate, a gate structure wrapping around each of the number of channel members, a dielectric fin structure disposed adjacent to the gate structure, the dielectric fin structure includes a first dielectric layer disposed over the substrate and in direct contact with the first gate structure, a second dielectric layer disposed over the first dielectric layer, and a third dielectric layer. the third dielectric is disposed over the second dielectric layer and spaced apart from the first dielectric layer and the gate structure by the second dielectric layer. the dielectric fin structure also includes an isolation feature disposed directly over the third dielectric layer.