Taiwan semiconductor manufacturing company, ltd. (20240379673). GATE ISOLATION FEATURES AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTOR DEVICES simplified abstract
Contents
GATE ISOLATION FEATURES AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chia-Ta Yu of New Taipei City (TW)
Jiun-Ming Kuo of Taipei City (TW)
Yuan-Ching Peng of Hsinchu (TW)
GATE ISOLATION FEATURES AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379673 titled 'GATE ISOLATION FEATURES AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTOR DEVICES
The semiconductor structure described in the patent application consists of fins protruding from a substrate, separated by a dielectric layer, with each fin containing multiple semiconductor layers, source/drain features, and metal gate stacks.
- The semiconductor fins have source/drain features embedded in them.
- There are two metal gate stacks, each with a top portion and a bottom portion interleaved with the semiconductor layers.
- An isolation feature is present on the dielectric layer, in contact with the metal gate stacks, protruding from the top portion, and consisting of two compositionally different dielectric layers.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for high-performance computing and communication applications. - It can enhance the efficiency and speed of integrated circuits in various electronic devices.
Problems Solved: - Improved performance and functionality of semiconductor devices. - Enhanced integration and miniaturization of electronic components.
Benefits: - Increased speed and efficiency of electronic devices. - Higher levels of integration and functionality in semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Technology for High-Performance Devices This technology can be utilized in the production of cutting-edge processors, memory chips, and communication devices, catering to the growing demand for faster and more efficient electronics in the market.
Questions about the technology: 1. How does the presence of the isolation feature impact the performance of the semiconductor structure? The isolation feature helps in reducing interference between different components, leading to improved overall performance and reliability of the semiconductor device.
2. What are the advantages of having source/drain features embedded in the semiconductor fins? Embedding source/drain features in the semiconductor fins allows for more efficient electron flow and better control of the device's electrical properties, resulting in enhanced performance.
Original Abstract Submitted
a semiconductor structure includes fins protruding from a substrate and separated by a dielectric layer, each semiconductor fin including a plurality of semiconductor layers, source/drain (s/d) features disposed in the semiconductor fins, a first metal gate stack and a second metal gate stack disposed over the semiconductor fins and adjacent to the s/d features, where the first and the second metal gate stacks each include a top portion and a bottom portion disposed below the top portion, and where the bottom portion is interleaved with the semiconductor layers, and an isolation feature disposed on the dielectric layer and in contact with a sidewall surface of each of the first and the second metal gate stacks, where the isolation feature protrudes from the top portion of the first and the second metal gate stack, and where the isolation feature includes two compositionally different dielectric layers.
