Taiwan semiconductor manufacturing company, ltd. (20240379672). Transistor Gate Profile Optimization simplified abstract
Contents
Transistor Gate Profile Optimization
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wei-Chung Sun of Hsinchu City (TW)
Chih-Han Lin of Hsinchu City (TW)
Transistor Gate Profile Optimization - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379672 titled 'Transistor Gate Profile Optimization
The patent application describes a device with fin structures protruding vertically from a substrate, with a gate structure placed over them in a different direction.
- The fin structures extend vertically in a top view, while the gate structure extends horizontally.
- The fin pitch is determined by the dimension of the fin structures and the distance between them in the horizontal direction.
- The end segment of the gate structure extends beyond the edge of the closest fin structure and has a tapered profile or is at least 4 times longer than the fin pitch.
- This design allows for efficient control of the device's operation and performance.
Potential Applications:
- This technology can be used in semiconductor devices for improved functionality and efficiency.
- It can also be applied in integrated circuits for enhanced performance and reliability.
Problems Solved:
- Provides better control and management of the device's operation.
- Enhances the overall performance and efficiency of semiconductor devices.
Benefits:
- Improved functionality and efficiency in semiconductor devices.
- Enhanced performance and reliability in integrated circuits.
Commercial Applications:
- This technology can be utilized in the semiconductor industry for the development of advanced devices with superior performance.
- It can also benefit companies involved in integrated circuit manufacturing by offering innovative solutions for improved efficiency.
Questions about the technology: 1. How does the design of the fin structures and gate structure contribute to the device's performance? 2. What specific advantages does the tapered profile of the end segment of the gate structure offer in terms of device operation and control?
Original Abstract Submitted
a device includes a plurality of fin structures that each protrude vertically upwards out of a substrate and each extend in a first direction in a top view. a gate structure is disposed over the fin structures. the gate structure extends in a second direction in the top view. the second direction is different from the first direction. the fin structures have a fin pitch equal to a sum of: a dimension of one of the fin structures in the second direction and a distance between an adjacent pair of the fin structures in the second direction. an end segment of the gate structure extends beyond an edge of a closest one of the fin structures in the second direction. the end segment has a tapered profile in the top view or is at least 4 times as long as the fin pitch in the second direction.
