Taiwan semiconductor manufacturing company, ltd. (20240379669). Epitaxial Source/Drain Structures for Multigate Devices and Methods of Fabricating Thereof simplified abstract

Epitaxial Source/Drain Structures for Multigate Devices and Methods of Fabricating Thereof

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shahaji B. More of Hsinchu City (TW)

Cheng-Han Lee of New Taipei City (TW)

Epitaxial Source/Drain Structures for Multigate Devices and Methods of Fabricating Thereof - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379669 titled 'Epitaxial Source/Drain Structures for Multigate Devices and Methods of Fabricating Thereof

Simplified Explanation: The patent application discusses epitaxial source/drain structures to enhance the performance of multigate devices like fin-like field-effect transistors or gate-all-around FETs. These structures are fabricated with layers of different doping levels to optimize device performance while mitigating short channel effects.

• The epitaxial source/drain structure extends from the topmost channel layer into the semiconductor substrate.
• It consists of an undoped epitaxial layer with a trough-shaped top surface, followed by three doped epitaxial layers of increasing doping levels.
• The thickness of the undoped epitaxial layer is less than the depth of the structure into the substrate, tailored based on the active region size for optimal performance.
• By tuning the thickness and depth, the structure effectively addresses short channel effects and enhances device performance.

Key Features and Innovation:

• Epitaxial source/drain structures for multigate devices.
• Layers of undoped and doped epitaxial layers to optimize performance.
• Tailoring thickness and depth based on active region size.
• Mitigation of short channel effects.

Potential Applications:

• Advanced semiconductor devices.
• High-performance transistors.
• Next-generation integrated circuits.

Problems Solved:

• Short channel effects in multigate devices.
• Performance optimization in fin-like FETs and GAA FETs.

Benefits:

• Improved device performance.
• Enhanced efficiency.
• Mitigation of short channel effects.

Commercial Applications: Potential commercial applications include:

• Semiconductor industry for advanced devices.
• Electronics manufacturing for high-performance products.

Prior Art: Readers can explore prior research on epitaxial source/drain structures in multigate devices, semiconductor fabrication techniques, and performance optimization in transistors.

Frequently Updated Research: Stay updated on the latest advancements in epitaxial source/drain structures, multigate device technology, and semiconductor fabrication methods.

Questions about Epitaxial Source/Drain Structures: 1. What are the key benefits of using epitaxial source/drain structures in multigate devices? Epitaxial source/drain structures offer improved device performance, efficiency, and mitigation of short channel effects in advanced semiconductor devices.

2. How do epitaxial source/drain structures optimize performance in fin-like FETs and GAA FETs? By tailoring the thickness and depth of the epitaxial layers based on the active region size, these structures effectively address short channel effects and enhance device performance.

Original Abstract Submitted

epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (fets) or gate-all-around (gaa) fets, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. an exemplary source/drain structure extends from a topmost channel layer to a depth into a semiconductor substrate. the source/drain structure includes an undoped epitaxial layer with a trough-shaped top surface, a first doped epitaxial layer over the undoped epitaxial layer, a second doped epitaxial layer over the first epitaxial layer, and a third doped epitaxial layer over the second doped epitaxial layer. a thickness of the undoped epitaxial layer is less than the depth of the epitaxial source/drain structure into the semiconductor substrate. the thickness and the depth are tuned based on a size of an active region to which the epitaxial source/drain structure belongs, such that the epitaxial source/drain structure mitigates short channel effects while optimizing performance.