Taiwan semiconductor manufacturing company, ltd. (20240379668). HYBRID SEMICONDUCTOR DEVICE simplified abstract

HYBRID SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jung-Chien Cheng of Tainan City (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Shi Ning Ju of Hsinchu City (TW)

Guan-Lin Chen of Hsinchu County (TW)

Chih-Hao Wang of Hsinchu County (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

HYBRID SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379668 titled 'HYBRID SEMICONDUCTOR DEVICE

Simplified Explanation: The patent application describes a semiconductor device with two transistors, each containing source/drain features and vertically stacked nanostructures.

• The semiconductor device includes a first transistor with two first source/drain features and a first number of vertically stacked nanostructures.
• The second transistor in the device has two second source/drain features and a second number of vertically stacked nanostructures.

Key Features and Innovation:

• Semiconductor device with two transistors and vertically stacked nanostructures.
• Nanostructures extend lengthwise between the source/drain features.
• Improved performance and efficiency in semiconductor devices.

Potential Applications:

• Advanced electronics
• Semiconductor manufacturing
• Nanotechnology research

Problems Solved:

• Enhancing transistor performance
• Increasing efficiency in semiconductor devices

Benefits:

• Improved device performance
• Enhanced efficiency
• Potential for smaller and more powerful devices

Commercial Applications: Advanced Semiconductor Devices for Next-Generation Electronics Market

Prior Art: Research on vertically stacked nanostructures in semiconductor devices.

Frequently Updated Research: Ongoing studies on the optimization of nanostructures in semiconductor devices.

Questions about Semiconductor Devices: 1. How do vertically stacked nanostructures improve transistor performance? 2. What are the potential challenges in manufacturing semiconductor devices with nanostructures?

Original Abstract Submitted

semiconductor devices and method of forming the same are provided. in one embodiment, a semiconductor device includes a first transistor and a second transistor. the first transistor includes two first source/drain features and a first number of nanostructures that are stacked vertically one over another and extend lengthwise between the two first source/drain features. the second transistor includes two second source/drain features and a second number of nanostructures that are stacked vertically one over another and extend lengthwise between the two second source/drain features.