Taiwan semiconductor manufacturing company, ltd. (20240379666). METHODS OF FORMING AN INSULATING FEATURE IN SEMICONDUCTOR DEVICE simplified abstract
Contents
METHODS OF FORMING AN INSULATING FEATURE IN SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chi-Wei Wu of Hsinchu City (TW)
Hsin-Che Chiang of Taipei City (TW)
Chun-Sheng Liang of Changhua County (TW)
Jeng-Ya Yeh of New Taipei City (TW)
METHODS OF FORMING AN INSULATING FEATURE IN SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379666 titled 'METHODS OF FORMING AN INSULATING FEATURE IN SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a silicon substrate with a fin formed above it, providing active regions for two devices such as gate-all-around transistors. The device also features a fin-insulating structure that electrically isolates the active regions for the two devices. This structure is formed in a trench, with an oxide liner in the lower portion of the trench and filled with an insulating material like silicon nitride.
- The semiconductor device has a silicon substrate and a fin above it, providing active regions for two devices.
- A fin-insulating structure isolates the active regions for the two devices and is formed in a trench.
- The fin-insulating structure includes an oxide liner in the lower portion of the trench and is filled with an insulating material like silicon nitride.
Potential Applications: - This technology can be used in the manufacturing of gate-all-around transistors. - It can be applied in the development of advanced semiconductor devices for various electronic applications.
Problems Solved: - Provides electrical isolation for active regions in a semiconductor device. - Enables the creation of more efficient and compact devices with improved performance.
Benefits: - Enhanced performance and efficiency of semiconductor devices. - Allows for the fabrication of advanced transistors with improved functionality.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices for industries such as telecommunications, computing, and consumer electronics. The improved efficiency and compact design make it ideal for applications requiring advanced semiconductor technology.
Questions about the technology: 1. How does the fin-insulating structure contribute to the overall performance of the semiconductor device? 2. What are the specific advantages of using an oxide liner in the lower portion of the trench in the fin-insulating structure?
Original Abstract Submitted
a semiconductor device includes a silicon substrate and a fin formed above the substrate. the fin provides active regions for two devices, such as gate-all-around transistors. the semiconductor device also includes a fin-insulating structure positioned to electrically isolate the active regions for the two devices. the fin-insulating structure is formed in a trench, with a first portion adjacent the fin and a second portion below the fin and extending into the substrate. the fin-insulating structure includes an oxide liner in the second portion of the trench, but not the first portion. the fin-insulating structure is further filled with an insulating material such as silicon nitride.
