Taiwan semiconductor manufacturing company, ltd. (20240379663). LEAKAGE REDUCTION BY HALO-IMP TECHNOLOGY IN MESA REGION OF NANO SHEET DEVICE simplified abstract
Contents
LEAKAGE REDUCTION BY HALO-IMP TECHNOLOGY IN MESA REGION OF NANO SHEET DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Liang-Yin Chen of Hsinchu (TW)
Huicheng Chang of Hsinchu (TW)
LEAKAGE REDUCTION BY HALO-IMP TECHNOLOGY IN MESA REGION OF NANO SHEET DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379663 titled 'LEAKAGE REDUCTION BY HALO-IMP TECHNOLOGY IN MESA REGION OF NANO SHEET DEVICE
The abstract describes an integrated circuit with a substrate, a well, a stacked structure, a doped epi structure, and a source/drain region.
- The integrated circuit includes a substrate.
- A well is formed over a portion of the substrate.
- A stacked structure is formed over a first portion of the well.
- A doped epi structure is formed over a second portion of the well adjacent to the stacked structure.
- The doped epi structure is below a plane defined by an upper surface of the first portion of the well.
- A source/drain region is formed over the doped epi structure.
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit design
Problems Solved: - Enhancing the performance of integrated circuits - Improving the efficiency of semiconductor devices
Benefits: - Increased functionality of integrated circuits - Enhanced performance of electronic devices - Improved reliability of semiconductor components
Commercial Applications: Title: "Advanced Integrated Circuits for Enhanced Electronics" This technology can be used in the development of high-performance electronic devices, leading to improved consumer electronics, telecommunications equipment, and computing systems. The market implications include increased demand for advanced semiconductor components and enhanced capabilities in various industries.
Prior Art: Readers can explore prior art related to integrated circuits, semiconductor manufacturing, and electronic device design to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Researchers are continually exploring new methods to optimize integrated circuits, improve semiconductor materials, and enhance the performance of electronic devices. Stay informed about the latest developments in this rapidly evolving field.
Questions about Integrated Circuits: 1. How do integrated circuits impact the efficiency of electronic devices? Integrated circuits play a crucial role in enhancing the performance and functionality of electronic devices by integrating multiple components into a single chip, reducing size, power consumption, and improving overall efficiency.
2. What are the key challenges in developing advanced integrated circuits? Developing advanced integrated circuits involves overcoming challenges related to miniaturization, power consumption, heat dissipation, and manufacturing processes to meet the increasing demands for high-performance electronic devices.
Original Abstract Submitted
an integrated circuit includes a substrate, a well formed over a portion of the substrate, a stacked structure formed over a first portion of the well, a doped epi structure formed over a second portion of the well adjacent the stacked structure and below a plane defined by an upper surface of the first portion of the well, and a source/drain region formed over the doped epi structure.
