Taiwan semiconductor manufacturing company, ltd. (20240379660). Semiconductor Device and Fabricating Method Thereof simplified abstract
Contents
Semiconductor Device and Fabricating Method Thereof
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng-Chien Huang of Hsinchu (TW)
Horng-Huei Tseng of Hsinchu (TW)
Tsung-Yu Chiang of New Taipei (TW)
Semiconductor Device and Fabricating Method Thereof - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379660 titled 'Semiconductor Device and Fabricating Method Thereof
The semiconductor device described in the patent application consists of a finFET component, patterned dummy semiconductor fins, an isolation structure, and a tuning component. The patterned dummy semiconductor fins are shorter in height compared to the fins of the finFET component and are arranged alongside them.
- The semiconductor device includes a finFET component, patterned dummy semiconductor fins, an isolation structure, and a tuning component.
- The patterned dummy semiconductor fins are shorter in height than the fins of the finFET component.
- The patterned dummy semiconductor fins are arranged alongside the fins of the finFET component.
- An isolation structure is formed on the patterned dummy semiconductor fins.
- The tuning component is formed on the patterned dummy semiconductor fins and is electrically connected to the finFET component.
Potential Applications: - This technology can be used in the semiconductor industry for the development of more efficient and high-performance devices. - It can be applied in the manufacturing of advanced electronic devices such as smartphones, tablets, and computers.
Problems Solved: - Provides improved performance and efficiency in semiconductor devices. - Enhances the overall functionality of electronic devices.
Benefits: - Increased performance and efficiency in semiconductor devices. - Enhanced functionality and reliability of electronic devices.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be utilized in the production of cutting-edge electronic devices, leading to improved performance and efficiency. It can have significant implications in various industries such as consumer electronics, telecommunications, and computing.
Questions about the technology: 1. How does the height difference between the patterned dummy semiconductor fins and the fins of the finFET component impact the overall performance of the semiconductor device? 2. What are the specific advantages of having a tuning component formed on the patterned dummy semiconductor fins in terms of device functionality and performance?
Original Abstract Submitted
a semiconductor device includes a finfet component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the finfet component, an isolation structure formed on the patterned dummy semiconductor fins, and a tuning component formed on the patterned dummy semiconductor fins and electrically connected to the finfet component. a height of the patterned dummy semiconductor fins is shorter than that of the fins of the finfet component.
