Taiwan semiconductor manufacturing company, ltd. (20240379659). SEMICONDUCTOR DEVICE AND METHOD simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379659 titled 'SEMICONDUCTOR DEVICE AND METHOD
The method described in the abstract involves the formation of a fin protruding from a substrate, followed by the implantation of an n-type dopant to create an n-type channel region and a p-type dopant to create a p-type channel region adjacent to the n-type region. Gate structures are then formed over the respective channel regions, and epitaxial regions are formed on either side of the gate structures in the fin.
- Formation of a fin protruding from a substrate
- Implantation of n-type and p-type dopants to create channel regions
- Formation of gate structures over the channel regions
- Creation of epitaxial regions adjacent to the gate structures in the fin
Potential Applications: - Semiconductor device manufacturing - Integrated circuits - Transistor technology
Problems Solved: - Enhancing the performance of semiconductor devices - Improving the efficiency of integrated circuits - Increasing the speed of transistor technology
Benefits: - Higher conductivity in the channel regions - Improved control over the flow of current - Enhanced overall device performance
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, leading to faster and more efficient integrated circuits. The market implications include improved consumer electronics, telecommunications equipment, and computing devices.
Questions about the technology: 1. How does the formation of epitaxial regions impact the performance of the semiconductor device? 2. What are the specific advantages of having both n-type and p-type channel regions in the same fin structure?
Original Abstract Submitted
a method includes: forming a fin protruding from a substrate; implanting an n-type dopant in the fin to form an n-type channel region; implanting a p-type dopant in the fin to form a p-type channel region adjacent the n-type channel region; forming a first gate structure over the n-type channel region and a second gate structure over the p-type channel region; forming a first epitaxial region in the fin adjacent a first side of the first gate structure; forming a second epitaxial region in the fin adjacent a second side of the first gate structure and adjacent a first side of the second gate structure; and forming a third epitaxial region in the fin adjacent a second side of the second gate structure.
