Taiwan semiconductor manufacturing company, ltd. (20240379654). Integrated Hybrid Standard Cell Structure with Gate-All-Around Device simplified abstract
Contents
Integrated Hybrid Standard Cell Structure with Gate-All-Around Device
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Hao Wang of Hsinchu City (TW)
Shang-Wen Chang of Hsinchu County (TW)
Integrated Hybrid Standard Cell Structure with Gate-All-Around Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379654 titled 'Integrated Hybrid Standard Cell Structure with Gate-All-Around Device
The disclosed circuit in this patent application consists of two active regions (AR) in a first standard cell (SC) and two active regions in a second standard cell, with gate stacks extending between them.
- The circuit includes active regions spaced along a direction in two standard cells, with gate stacks connecting them.
- The first and second active regions in the first standard cell have a different structure from the third and fourth active regions in the second standard cell.
- The gate stacks extend from the fourth cell edge of the second standard cell to the first cell edge of the first standard cell.
- The third cell edge is aligned with and contacts the second cell edge.
- The dimensions and widths of the active regions vary between the first and second standard cells.
Potential Applications: - This circuit design could be used in semiconductor manufacturing for improved performance and efficiency. - It may find applications in the development of advanced electronic devices and integrated circuits.
Problems Solved: - The circuit design addresses the need for efficient and compact layouts in semiconductor devices. - It solves challenges related to connecting active regions in different standard cells.
Benefits: - Enhanced performance and functionality in semiconductor devices. - Improved integration and connectivity between active regions in standard cells.
Commercial Applications: Title: Advanced Circuit Design for Semiconductor Devices This technology could be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the circuit design improve the efficiency of semiconductor devices? 2. What are the potential implications of using gate stacks to connect active regions in different standard cells?
Original Abstract Submitted
the disclosed circuit includes a first and a second active region (ar) spaced a spacing s along a direction in a first standard cell (sc) that spans dalong the direction between a first and a second cell edge (ce). each of the first and second ars spans a first width walong the direction; a third and a fourth ar spaced s in a second sc that spans a second dimension dalong the direction between a third and a fourth ce; and gate stacks extend from the fourth ce of the second sc to the first ce of the first sc, wherein d<d; each of the third and fourth ars spans a second width walong the direction; w<w; and the third ce is aligned with and contacts the second ce. the first and second ars have a structure different from the third and fourth ars.
