Taiwan semiconductor manufacturing company, ltd. (20240379611). METAL BONDING STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
METAL BONDING STRUCTURE AND MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Liang Lu of Tainan City (TW)
Wei-Lin Chen of Tainan City (TW)
Chun-Hao Chou of Tainan City (TW)
Kuo-Cheng Lee of Tainan City (TW)
METAL BONDING STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379611 titled 'METAL BONDING STRUCTURE AND MANUFACTURING METHOD THEREOF
- Simplified Explanation:**
This patent application describes a semiconductor structure consisting of two wafers with metal structures bonded together through a metal bonding structure.
- Key Features and Innovation:**
- Semiconductor structure with metal structures in two wafers
- Metal bonding structure connecting the metal structures through the interface
- Potential Applications:**
This technology could be used in the manufacturing of advanced semiconductor devices, integrated circuits, and microelectronics.
- Problems Solved:**
This technology addresses the need for reliable and efficient bonding of metal structures in semiconductor devices.
- Benefits:**
- Improved performance and reliability of semiconductor devices
- Enhanced manufacturing processes for integrated circuits
- Increased efficiency in microelectronics production
- Commercial Applications:**
The technology could be applied in the semiconductor industry for the development of high-performance electronic devices, potentially impacting markets for consumer electronics, telecommunications, and computing.
- Questions about Semiconductor Structure:**
1. How does the metal bonding structure enhance the performance of the semiconductor structure? 2. What are the potential challenges in scaling up the production of semiconductor structures with bonded metal structures?
Original Abstract Submitted
some implementations described herein provide a semiconductor structure. the semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. the semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. the semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.
