Taiwan semiconductor manufacturing company, ltd. (20240379595). SEMICONDUCTOR STRUCTURES AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR STRUCTURES AND METHODS OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Hsiang-Ku Shen of Hsinchu City (TW)

Chun-Wen Hsiao of Hsinchu (TW)

Fang-I Chih of Tainan City (TW)

Wen-Ling Chang of Miaoli County (TW)

SEMICONDUCTOR STRUCTURES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379595 titled 'SEMICONDUCTOR STRUCTURES AND METHODS OF FORMING THE SAME

• • Simplified Explanation:**

The method described in the patent application involves the creation of a workpiece with two conductive pads of different heights, a dielectric structure, and a planarization process.

• • Key Features and Innovation:**
• Workpiece with first and second conductive pads of different heights
• Conformal formation of an etch stop layer on the conductive pads
• Dielectric structure formed over the etch stop layer
• Planarization process performed on the dielectric structure
• Conformal deposition of a dielectric layer with varying thickness over the conductive pads

• • Potential Applications:**

This technology could be used in semiconductor manufacturing, integrated circuit fabrication, and microelectronics production.

• • Problems Solved:**

This technology addresses the challenge of creating precise layers of dielectric material over conductive pads of different heights.

• • Benefits:**
• Improved precision in layer deposition
• Enhanced performance of electronic components
• Increased efficiency in manufacturing processes

• • Commercial Applications:**

The technology could be utilized in the production of advanced electronic devices, such as smartphones, tablets, and computers, to improve their performance and reliability.

• • Questions about the Technology:**

1. How does the varying thickness of the dielectric layer benefit the overall performance of the electronic components? 2. What are the specific challenges in conformally depositing the dielectric layer over the conductive pads of different heights?

• • Frequently Updated Research:**

Researchers are constantly exploring new materials and techniques to further enhance the precision and efficiency of layer deposition in semiconductor manufacturing.

Original Abstract Submitted

a method includes providing a workpiece having a first conductive pad and a second conductive pad over a substrate, a topmost point of the second conductive pad is above that of the first conductive pad by a height difference, conformally forming a first etch stop layer on the first and the second conductive pads, forming a dielectric structure over the first etch stop layer, performing a planarization process to the dielectric structure, and after the performing of the planarization process, conformally depositing a dielectric layer over the workpiece, the dielectric layer including a first portion disposed directly over the first conductive pad and a second portion disposed directly over the second conductive pad, where a thickness difference between a thickness of the first portion of the dielectric layer and a thickness of the second portion of the dielectric layer is less than the height difference.