Taiwan semiconductor manufacturing company, ltd. (20240379593). REDUCTION OF CRACKS IN PASSIVATION LAYER simplified abstract
Contents
REDUCTION OF CRACKS IN PASSIVATION LAYER
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yuan-Yang Hsiao of Hsinchu (TW)
Chen-Chiu Huang of Hsinchu (TW)
Zhiqiang Wu of Hsinchu County (TW)
REDUCTION OF CRACKS IN PASSIVATION LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379593 titled 'REDUCTION OF CRACKS IN PASSIVATION LAYER
The abstract of the patent application describes a semiconductor structure that includes multiple transistors, an interconnect structure, a metal feature, an insulation layer, and redistribution features.
- The semiconductor structure consists of a plurality of transistors.
- An interconnect structure is electrically connected to the transistors.
- A metal feature is positioned over the interconnect structure and isolated from the transistors.
- An insulation layer is placed over the metal feature.
- A first redistribution feature and a second redistribution feature are located over the insulation layer.
- There is a space between the first and second redistribution features that is directly above at least a portion of the metal feature.
Potential Applications: - This semiconductor structure could be used in various electronic devices such as smartphones, computers, and tablets. - It could also be applied in automotive electronics, industrial machinery, and communication systems.
Problems Solved: - Provides a compact and efficient way to connect multiple transistors in a semiconductor structure. - Ensures proper electrical isolation between the transistors and the metal feature. - Facilitates the redistribution of signals within the semiconductor structure.
Benefits: - Improved performance and reliability of electronic devices. - Enhanced signal transmission and reduced interference. - Cost-effective manufacturing process for semiconductor structures.
Commercial Applications: - This technology could be valuable for semiconductor manufacturers looking to enhance the performance of their products. - It could also be beneficial for companies developing advanced electronic devices with high-speed processing requirements.
Prior Art: - Researchers and engineers in the field of semiconductor technology may find relevant prior art in studies related to interconnect structures, metal features, and insulation layers in semiconductor devices.
Frequently Updated Research: - Researchers are constantly exploring new materials and designs to improve the efficiency and functionality of semiconductor structures. Stay updated on the latest advancements in the field to leverage the full potential of this technology.
Questions about Semiconductor Structures: 1. How does the placement of the metal feature impact the overall performance of the semiconductor structure? 2. What are the key considerations in designing the redistribution features for optimal signal transmission efficiency?
Original Abstract Submitted
methods and semiconductor structures are provided. a semiconductor structure according to the present disclosure includes a plurality of transistors, an interconnect structure electrically coupled to the plurality of transistors, a metal feature disposed over the interconnect structure and electrically isolated from the plurality of transistors, an insulation layer disposed over the metal feature, and a first redistribution feature and a second redistribution feature disposed over the insulation layer. a space between the first redistribution feature and the second redistribution feature is disposed directly over at least a portion of the metal feature.
