Taiwan semiconductor manufacturing company, ltd. (20240379570). SUBSTRATE LOSS REDUCTION FOR SEMICONDUCTOR DEVICES simplified abstract
Contents
SUBSTRATE LOSS REDUCTION FOR SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Xin-Hua Huang of Xihu Township (TW)
Kuei-Ming Chen of New Taipei City (TW)
SUBSTRATE LOSS REDUCTION FOR SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379570 titled 'SUBSTRATE LOSS REDUCTION FOR SEMICONDUCTOR DEVICES
Simplified Explanation: The patent application describes an integrated circuit (IC) chip with a unique semiconductor device structure that reduces substrate power loss.
Key Features and Innovation:
- Semiconductor device is inverted and overlies a dielectric region in the semiconductor substrate.
- Interconnect structure includes an intermetal dielectric (IMD) layer bonded to the substrate, accommodating a pad.
- First source/drain electrode is electrically coupled to the pad, reducing substrate capacitance.
- Contact extends through the semiconductor layer to the pad for electrical connection.
Potential Applications: This technology can be applied in the semiconductor industry for advanced IC chip designs, particularly in reducing substrate power loss and improving overall performance.
Problems Solved: The technology addresses the issue of substrate power loss in semiconductor devices, which can impact efficiency and performance.
Benefits:
- Decreased substrate power loss
- Improved performance and efficiency of semiconductor devices
- Enhanced overall functionality of IC chips
Commercial Applications: The technology can be utilized in the development of high-performance electronic devices, such as smartphones, computers, and other consumer electronics, to enhance their functionality and efficiency.
Prior Art: Researchers can explore prior patents related to semiconductor device structures and substrate power loss reduction techniques in the semiconductor industry.
Frequently Updated Research: Researchers may find updated studies on semiconductor device structures and power loss reduction techniques in academic journals and industry publications.
Questions about Semiconductor Device Structures: 1. How does the dielectric region in the semiconductor substrate help reduce substrate power loss? 2. What are the potential implications of this technology for the semiconductor industry?
Original Abstract Submitted
various embodiments of the present disclosure are directed towards an integrated circuit (ic) chip comprising a semiconductor device that is inverted and that overlies a dielectric region inset into a top of a semiconductor substrate. an interconnect structure overlies the semiconductor substrate and the dielectric region and further comprises an intermetal dielectric (imd) layer. the imd layer is bonded to the top of the semiconductor substrate and accommodates a pad. a semiconductor layer overlies the interconnect structure, and the semiconductor device is in the semiconductor layer, between the semiconductor layer and the interconnect structure. the semiconductor device comprises a first source/drain electrode overlying the dielectric region and further overlying and electrically coupled to the pad. the dielectric region reduces substrate capacitance to decrease substrate power loss and may, for example, be a cavity or a dielectric layer. a contact extends through the semiconductor layer to the pad.
