Taiwan semiconductor manufacturing company, ltd. (20240379563). REDUCING RC DELAY IN SEMICONDUCTOR DEVICES simplified abstract
Contents
REDUCING RC DELAY IN SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Gulbagh Singh of Tainan City (TW)
Kun-Tsang Chuang of Miaoli City (TW)
Po-Jen Wang of Taichung City (TW)
REDUCING RC DELAY IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379563 titled 'REDUCING RC DELAY IN SEMICONDUCTOR DEVICES
The present disclosure describes a method for reducing RC delay in radio frequency operated devices or devices that would benefit from an RC delay reduction. The method includes forming a transistor structure on a substrate, depositing dielectric layers, forming source/drain contacts, metal lines, and an air-gap to reduce delay.
- Forming a transistor structure on a substrate
- Depositing a first dielectric layer to embed the transistor structure
- Forming source/drain contacts within the first dielectric layer
- Depositing a second dielectric layer
- Forming metal lines in the second dielectric layer
- Etching through the second dielectric layer to create an air-gap
- Depositing a third dielectric layer to form the air-gap
Potential Applications: - Semiconductor devices - Radio frequency operated devices - Integrated circuits
Problems Solved: - Reducing RC delay in devices - Improving performance of radio frequency devices
Benefits: - Faster operation - Improved efficiency - Enhanced overall device performance
Commercial Applications: Title: "Advanced RC Delay Reduction Technology for Semiconductor Devices" This technology can be applied in the semiconductor industry to improve the performance of radio frequency devices, leading to faster and more efficient operations. The market implications include increased demand for high-performance devices in various industries such as telecommunications, consumer electronics, and automotive.
Questions about RC Delay Reduction: 1. How does the method described in the patent application help in reducing RC delay in devices? - The method involves creating an air-gap between dielectric layers to reduce capacitance and improve signal propagation, thereby reducing RC delay. 2. What are the potential commercial applications of this technology in the semiconductor industry? - The technology can be used in various semiconductor devices to enhance performance and efficiency, making it attractive for applications in telecommunications, consumer electronics, and automotive industries.
Original Abstract Submitted
the present disclosure describes a method for reducing rc delay in radio frequency operated devices or devices that would benefit from an rc delay reduction. the method includes forming, on a substrate, a transistor structure having source/drain regions and a gate structure; depositing a first dielectric layer on the substrate to embed the transistor structure; forming, within the first dielectric layer, source/drain contacts on the source/drain regions of the transistor structure; depositing a second dielectric layer on the first dielectric layer; forming metal lines in the second dielectric layer; forming an opening in the second dielectric layer between the metal lines to expose the first dielectric layer; etching, through the opening, the second dielectric layer between the metal lines and the first dielectric layer between the source/drain contacts; and depositing a third dielectric layer to form an air-gap in the first and second dielectric layers and over the transistor structure.
