Taiwan semiconductor manufacturing company, ltd. (20240379560). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shao-Kuan Lee of Kaohsiung (TW)

Cherng-Shiaw Tsai of New Taipei City (TW)

Cheng-Chin Lee of Taipei (TW)

Hsiaokang Chang of Hsinchu (TW)

Kuang-Wei Yang of Hsinchu (TW)

Hsin-Yen Huang of New Taipei City (TW)

Shau-Lin Shue of Hsinchu (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379560 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

The abstract describes an interconnection structure involving a dielectric layer, multiple conductive features, graphene layers, and dielectric materials.

• The structure includes a dielectric layer.
• A first conductive feature is placed within the dielectric layer.
• A second conductive feature is positioned over the first conductive feature.
• A third conductive feature is located adjacent to the second conductive feature.
• A first dielectric material is present between the second and third conductive features.
• Graphene layers are incorporated between the second conductive feature and the first dielectric material, as well as between the third conductive feature and the first dielectric material.

Potential Applications: - This technology could be used in semiconductor devices. - It may find applications in integrated circuits. - The interconnection structure could be beneficial in electronic components.

Problems Solved: - Provides a reliable and efficient interconnection structure. - Enhances the performance of electronic devices. - Improves the overall functionality of semiconductor components.

Benefits: - Increased conductivity and signal transmission. - Enhanced durability and reliability. - Improved efficiency and performance of electronic systems.

Commercial Applications: Title: Advanced Interconnection Structure for Semiconductor Devices This technology could be utilized in the manufacturing of high-performance electronic devices, leading to improved functionality and reliability. The market implications include increased demand for advanced semiconductor components in various industries such as telecommunications, consumer electronics, and automotive.

Questions about the technology: 1. How does the interconnection structure impact the overall performance of semiconductor devices? 2. What are the potential challenges in implementing this technology in commercial electronic products?

Frequently Updated Research: Stay updated on the latest advancements in interconnection structures for semiconductor devices to ensure the integration of cutting-edge technology in electronic manufacturing processes.

Original Abstract Submitted

an interconnection structure, along with methods of forming such, are described. the structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, a second conductive feature disposed over the first conductive feature, a third conductive feature disposed adjacent the second conductive feature, a first dielectric material disposed between the second and third conductive features, a first one or more graphene layers disposed between the second conductive feature and the first dielectric material, and a second one or more graphene layers disposed between the third conductive feature and the first dielectric material.