Taiwan semiconductor manufacturing company, ltd. (20240379559). GRAPHENE-ASSISTED LOW-RESISTANCE INTERCONNECT STRUCTURES AND METHODS OF FORMATION THEREOF simplified abstract
Contents
GRAPHENE-ASSISTED LOW-RESISTANCE INTERCONNECT STRUCTURES AND METHODS OF FORMATION THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shin-Yi Yang of New Taipei City (TW)
Yu-Chen Chan of Taichung City (TW)
Ming-Han Lee of Taipei City (TW)
Hai-Ching Chen of Hsinchu City (TW)
GRAPHENE-ASSISTED LOW-RESISTANCE INTERCONNECT STRUCTURES AND METHODS OF FORMATION THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379559 titled 'GRAPHENE-ASSISTED LOW-RESISTANCE INTERCONNECT STRUCTURES AND METHODS OF FORMATION THEREOF
The abstract of the patent application describes a semiconductor structure that includes graphene layers, conductive features, and an etch-stop layer.
- The semiconductor structure consists of a first conductive feature and a second conductive feature within an interlayer dielectric (ILD) layer.
- A first graphene layer is positioned over the first conductive feature, while a second graphene layer covers a portion of the second conductive feature.
- An etch-stop layer (ESL) is placed horizontally between the first and second graphene layers, with a side surface of either graphene layer in direct contact with a side surface of the ESL.
- A third conductive feature is electrically connected to the second conductive feature, separated from the first graphene layer by a portion of the ESL, and in direct contact with the top surface of the ESL.
Potential Applications: - This semiconductor structure could be used in advanced electronic devices requiring high performance and efficiency. - It may find applications in the development of next-generation computing systems, sensors, and communication devices.
Problems Solved: - The semiconductor structure addresses the need for improved conductivity and interconnectivity in semiconductor devices. - It provides a solution for enhancing the performance and reliability of electronic components.
Benefits: - Enhanced electrical conductivity and signal transmission efficiency. - Improved integration and miniaturization of semiconductor components. - Increased durability and stability of electronic devices.
Commercial Applications: Title: Advanced Semiconductor Structures for High-Performance Electronics This technology could be utilized in the production of high-speed processors, memory chips, and wireless communication devices. The market implications include advancements in the semiconductor industry, leading to more efficient and reliable electronic products.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching graphene-based semiconductor structures, conductive features in semiconductor devices, and etch-stop layers in electronic components.
Frequently Updated Research: Researchers are continuously studying the optimization of graphene layers in semiconductor structures, the development of novel conductive features, and the enhancement of etch-stop layers for improved device performance.
Questions about Semiconductor Structures with Graphene Layers: 1. How does the integration of graphene layers impact the conductivity of semiconductor devices? 2. What are the potential challenges associated with incorporating etch-stop layers in semiconductor structures?
Original Abstract Submitted
a semiconductor structure is provided. the semiconductor structure includes a first conductive feature and a second conductive feature disposed in an interlayer dielectric (ild) layer. the semiconductor structure includes a first graphene layer disposed over the first conductive feature and a second graphene layer disposed over a portion of the second conductive feature. an etch-stop layer (esl) is horizontally interposed between the first graphene layer and the second graphene layer. a side surface of the first or the second graphene layer directly contacts a side surface of the esl. a third conductive feature is electrically coupled to the second conductive feature. the third conductive feature is separated from the first graphene layer by a portion of the esl, and the third conductive feature also directly contacts a top surface of the esl.
