Taiwan semiconductor manufacturing company, ltd. (20240379557). CONDUCTIVE CONTACT HAVING BARRIER LAYERS WITH DIFFERENT DEPTHS simplified abstract
Contents
CONDUCTIVE CONTACT HAVING BARRIER LAYERS WITH DIFFERENT DEPTHS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chia-Yang Wu of Tainan City (TW)
Shiu-Ko Jangjian of Tainan City (TW)
Ting-Chun Wang of Tainan City (TW)
CONDUCTIVE CONTACT HAVING BARRIER LAYERS WITH DIFFERENT DEPTHS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379557 titled 'CONDUCTIVE CONTACT HAVING BARRIER LAYERS WITH DIFFERENT DEPTHS
The semiconductor device described in the patent application includes a transistor with a source/drain and a gate, as well as a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor, and it consists of multiple barrier layers with varying depths.
- The semiconductor device features a transistor with a source/drain and a gate.
- A conductive contact is included to provide electrical connectivity to the transistor.
- The conductive contact is made up of multiple barrier layers with different depths.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices. - It may find applications in the development of high-performance electronic components.
Problems Solved: - Provides improved electrical connectivity in semiconductor devices. - Enhances the performance and reliability of transistors.
Benefits: - Increased efficiency in electronic devices. - Enhanced durability and longevity of semiconductor components.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could be utilized in the production of cutting-edge electronic devices, leading to improved performance and reliability in various industries such as telecommunications, computing, and consumer electronics.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching semiconductor device manufacturing processes and advancements in transistor technology.
Frequently Updated Research: Stay updated on the latest developments in semiconductor device technology and transistor design to understand the evolving landscape of electronic components.
Questions about Semiconductor Device Technology: 1. What are the key advantages of using multiple barrier layers in the conductive contact of a semiconductor device? - Multiple barrier layers provide enhanced protection and improved electrical performance in the device. 2. How does the depth variation of barrier layers in the conductive contact impact the overall functionality of the transistor? - Varying depths of barrier layers can influence the conductivity and efficiency of the transistor, leading to optimized performance.
Original Abstract Submitted
a semiconductor device includes a transistor having a source/drain and a gate. the semiconductor device also includes a conductive contact for the transistor. the conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. the conductive contact includes a plurality of barrier layers. the barrier layers have different depths from one another.
