Taiwan semiconductor manufacturing company, ltd. (20240379540). INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract

From WikiPatents
Revision as of 01:41, 25 November 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chung-Liang Cheng of Changhua County (TW)

Shih Wei Bih of Taichung City (TW)

Yen-Yu Chen of Taichung City (TW)

INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379540 titled 'INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME

The semiconductor device described in the abstract includes a first conductive structure with sidewalls and a bottom surface, extending through isolation layers on a substrate, and an insulation layer between the sidewalls of the first conductive structure and the isolation layers. The first conductive structure is electrically coupled to a second conductive structure through at least the bottom surface.

  • The semiconductor device features a unique structure with an insulation layer between the conductive structure and isolation layers, enhancing electrical coupling.
  • The device allows for efficient electrical connections between different conductive structures within the semiconductor.
  • By extending through isolation layers, the device optimizes space utilization on the substrate.
  • The insulation layer provides isolation and protection for the conductive structures, improving overall device reliability.
  • The design of the semiconductor device enables more compact and reliable electronic systems.

Potential Applications: - Integrated circuits - Microprocessors - Memory devices - Power electronics - Sensor devices

Problems Solved: - Enhanced electrical coupling between conductive structures - Improved space utilization on substrates - Increased device reliability and protection - Facilitated compact electronic system design

Benefits: - Improved electrical performance - Space-efficient design - Enhanced device reliability - Versatile applications in various electronic systems

Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electrical Coupling This technology can be utilized in the production of integrated circuits, microprocessors, memory devices, and other electronic components, catering to industries such as telecommunications, consumer electronics, automotive, and aerospace.

Questions about Semiconductor Devices: 1. How does the insulation layer contribute to the overall reliability of the semiconductor device? The insulation layer provides isolation and protection for the conductive structures, reducing the risk of electrical interference and enhancing device reliability.

2. What are the potential market implications of implementing this advanced semiconductor technology? The market implications include improved performance and reliability of electronic devices, leading to increased demand in industries such as telecommunications, consumer electronics, automotive, and aerospace.


Original Abstract Submitted

a semiconductor device includes: a first conductive structure having sidewalls and a bottom surface, the first conductive structure extending through one or more isolation layers formed on a substrate; and an insulation layer disposed between at least one of the sidewalls of the first conductive structure and respective sidewalls of the one or more isolation layers, wherein the first conductive structure is electrically coupled to a second conductive structure through at least the bottom surface.