Taiwan semiconductor manufacturing company, ltd. (20240379538). Semiconductor Device and Method of Manufacture simplified abstract
Contents
Semiconductor Device and Method of Manufacture
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chien-Hsun Chen of Zhutian Township (TW)
Semiconductor Device and Method of Manufacture - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379538 titled 'Semiconductor Device and Method of Manufacture
Simplified Explanation: The method involves creating a redistribution structure on a carrier, attaching an integrated passive device and an interconnect structure to the structure, depositing an underfill material, and attaching a semiconductor device.
Key Features and Innovation:
- Formation of a redistribution structure on a carrier
- Attachment of an integrated passive device and an interconnect structure
- Use of underfill material between the interconnect structure and the redistribution structure
- Attachment of a semiconductor device on the opposite side of the redistribution structure
Potential Applications: This technology can be applied in the manufacturing of advanced electronic devices such as smartphones, tablets, and computers.
Problems Solved: This technology addresses the need for efficient and compact integration of passive devices in semiconductor devices.
Benefits:
- Improved performance and reliability of electronic devices
- Enhanced compactness and efficiency in device design
- Streamlined manufacturing processes
Commercial Applications: The technology can be utilized in the consumer electronics industry for the production of high-performance electronic devices with integrated passive components.
Prior Art: Readers can explore prior art related to this technology in the field of semiconductor packaging and integration of passive devices.
Frequently Updated Research: Researchers are continuously exploring new materials and techniques to further enhance the integration of passive devices in semiconductor devices.
Questions about the Technology: 1. How does the underfill material contribute to the overall performance of the device? 2. What are the potential challenges in scaling up this technology for mass production?
Original Abstract Submitted
a method includes forming a redistribution structure on a carrier, attaching an integrated passive device on a first side of the redistribution structure, attaching an interconnect structure to the first side of the redistribution structure, the integrated passive device interposed between the redistribution structure and the interconnect structure, depositing an underfill material between the interconnect structure and the redistribution structure, and attaching a semiconductor device on a second side of the redistribution structure that is opposite the first side of the redistribution structure.
