Taiwan semiconductor manufacturing company, ltd. (20240379537). SEMICONDUCTOR STRUCTURE HAVING DEEP METAL LINE AND METHOD FOR FORMING THE SEMICONDUCTOR STRUCTURE simplified abstract
Contents
SEMICONDUCTOR STRUCTURE HAVING DEEP METAL LINE AND METHOD FOR FORMING THE SEMICONDUCTOR STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hsin-Ping Chen of Hsinchu (TW)
SEMICONDUCTOR STRUCTURE HAVING DEEP METAL LINE AND METHOD FOR FORMING THE SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379537 titled 'SEMICONDUCTOR STRUCTURE HAVING DEEP METAL LINE AND METHOD FOR FORMING THE SEMICONDUCTOR STRUCTURE
The semiconductor structure described in the abstract includes a substrate with a semiconductor device, a dielectric layer, a first conductive feature, and a second conductive feature. The first conductive feature is formed in the dielectric layer, while the second conductive feature penetrates the first conductive feature and the dielectric layer, electrically connecting to the first conductive feature and the semiconductor device.
- The semiconductor structure consists of a substrate with a semiconductor device, a dielectric layer, and two conductive features.
- The first conductive feature is embedded in the dielectric layer, while the second conductive feature pierces through both the first conductive feature and the dielectric layer.
- The second conductive feature establishes electrical connections with both the first conductive feature and the semiconductor device.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can enhance the performance and functionality of electronic components. - The structure can be utilized in various integrated circuits and microelectronics applications.
Problems Solved: - Provides a more efficient way to connect conductive features in semiconductor structures. - Improves the overall performance and reliability of semiconductor devices. - Enhances the integration of components in electronic systems.
Benefits: - Increased efficiency in semiconductor device manufacturing. - Enhanced performance and functionality of electronic components. - Improved reliability and connectivity in integrated circuits.
Commercial Applications: Title: Advanced Semiconductor Structure for Enhanced Connectivity This technology can be used in the production of high-performance electronic devices, such as smartphones, computers, and IoT devices. It can also benefit industries like telecommunications, automotive, and aerospace.
Questions about the technology: 1. How does the second conductive feature improve the connectivity of the semiconductor structure? 2. What are the potential implications of this technology in the field of microelectronics?
Original Abstract Submitted
a semiconductor structure includes a substrate, a dielectric layer, a first conductive feature and a second conductive feature. the substrate includes a semiconductor device. the dielectric layer is disposed on the substrate. the first conductive feature is formed in the first dielectric layer. the second conductive feature penetrates the first conductive feature and the dielectric layer, and is electrically connected to the first conductive feature and the semiconductor device.
