Taiwan semiconductor manufacturing company, ltd. (20240379532). NOVEL MIM STRUCTURE simplified abstract
Contents
NOVEL MIM STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-huan Wei of Hsin-Chu (TW)
Szu-Yuan Chen of Hsin-Chu (TW)
NOVEL MIM STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379532 titled 'NOVEL MIM STRUCTURE
The abstract describes a method for manufacturing a three-dimensional metal-insulator-metal (MIM) capacitor in the back end of line of a semiconductor device, allowing for large and tunable capacitance values without interfering with the existing BEOL fabrication process.
- Forming a first conductive feature on a semiconductor substrate
- Forming a second conductive feature on the semiconductor substrate
- Creating a first via structure over the first conductive feature
- Establishing a first metallization structure over the first via structure, conductively coupled to the first conductive feature
- Adding a conductive etch stop structure on the first metallization structure
- Creating a first via hole above the etch stop structure and a deeper second via hole above the second conductive feature
- Forming a capacitor in the second via hole
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronic device production
Problems Solved: - Providing large and tunable capacitance values in a semiconductor device - Ensuring compatibility with existing BEOL fabrication processes
Benefits: - Enhanced performance of semiconductor devices - Increased flexibility in design and functionality - Cost-effective manufacturing process
Commercial Applications: This technology could be utilized in the production of advanced electronic devices, such as smartphones, tablets, and computers, to improve their performance and efficiency.
Questions about the technology: 1. How does this method compare to traditional capacitor manufacturing techniques? 2. What impact could this innovation have on the semiconductor industry in terms of product development and performance improvements?
Original Abstract Submitted
disclosed is a method of manufacturing a three dimensional (3d) metal-insulator-metal (mim) capacitor in the back end of line, which can provide large and tunable capacitance values and meanwhile, does not interfere with the existing beol fabrication process. in one embodiment, a method for fabricating a semiconductor device includes: forming a first conductive feature on a semiconductor substrate; forming a second conductive feature on the semiconductor substrate; forming a first via structure over the first conductive feature; forming a first metallization structure over the first via structure, wherein the first metallization structure is conductively coupled to the first conductive feature through the first via structure; forming a conductive etch stop structure on the first metallization structure; forming a first via hole above the conductive etch stop structure and a second via hole above the second conductive feature, wherein the first via hole exposes the conductive etch stop structure and the second via hole is deeper than the first via hole; and forming a capacitor in the second via hole.
