Taiwan semiconductor manufacturing company, ltd. (20240379531). BACK-END-OF-LINE PASSIVE DEVICE STRUCTURE simplified abstract
Contents
BACK-END-OF-LINE PASSIVE DEVICE STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Tsung-Chieh Hsiao of Changhua County (TW)
Hsiang-Ku Shen of Hsinchu City (TW)
Yuan-Yang Hsiao of Hsinchu (TW)
Chen-Chiu Huang of Hsinchu (TW)
BACK-END-OF-LINE PASSIVE DEVICE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379531 titled 'BACK-END-OF-LINE PASSIVE DEVICE STRUCTURE
The device structure in this patent application includes multiple conductor plate layers that are arranged in a specific configuration to reduce leakage and breakdown due to corner discharge effects in a back-end-of-line passive device.
- The device structure consists of a passivation layer, a first conductor plate layer, a second conductor plate layer, a third conductor plate layer, and a fourth conductor plate layer.
- The second conductor plate layer encloses the first conductor plate layer, while the fourth conductor plate layer encloses the third conductor plate layer.
- This configuration helps to minimize leakage and breakdown issues caused by corner discharge effects in the device.
- By structuring the conductor plate layers in this way, the device can maintain better performance and reliability in operation.
Potential Applications: - This technology can be applied in various passive devices in the semiconductor industry. - It can be used in integrated circuits, sensors, and other electronic components where reducing leakage and breakdown is crucial.
Problems Solved: - Addresses leakage and breakdown issues caused by corner discharge effects in back-end-of-line passive devices. - Improves the reliability and performance of electronic components by minimizing these effects.
Benefits: - Enhanced reliability and performance of passive devices. - Reduction in leakage and breakdown issues, leading to improved overall device functionality.
Commercial Applications: Title: Advanced Passive Device Structure for Improved Reliability This technology can be utilized in the semiconductor industry for manufacturing integrated circuits, sensors, and other electronic components. It can improve the reliability and performance of these devices, leading to better overall functionality and customer satisfaction.
Questions about the technology: 1. How does the specific configuration of the conductor plate layers help reduce leakage and breakdown in the device? 2. What are the potential implications of this technology in the semiconductor industry?
Original Abstract Submitted
a device structure according to the present disclosure includes a passivation layer, a first conductor plate layer disposed on the passivation layer, a second conductor plate layer disposed over the first conductor layer, a third conductor plate layer disposed over the second conductor layer, and a fourth conductor plate layer disposed over the third conductor layer. the second conductor plate layer encloses the first conductor plate layer and the fourth conductor plate layer encloses the third conductor plate layer. the device structure, when used in a back-end-of-line passive device, reduces leakage and breakdown due to corner discharge effect.
